Applied Materials, Inc.

Xi Cen

Kai Wu

Seshadri Ganguli

Avgerinos V Gelatos

He Ren

Yu Lei

Yi Xu

David T Or

Chunming Zhou

Feihu Wang

Byunghoon Yoon

Yakuan Yao

Yiming Lai

Mehul B Naik

Hao Chen

Joung Joo Lee

Kevin Kashefi

Lin Dong

Wei Lei

Mang-Mang Ling

Nobuyuki Sasaki

Peiqi Wang

Tom Ho Wing Yu

Wei Min Chan

Ju Ik Kang

Min Heon

Mei Yin Chang

Abhilash J Mayur

Zhebo Chen

Sang Ho Yu

Mehran Behdjat

Norman L Tam

Kazuya Daito

Raymond Hoiman Hung

Liqi Wu

Vikash Banthia

Guoqiang Jian

Chi-Chou Lin

Jing Zhou

Feiyue Ma

Xinming Zhang

Jenn-Yue Wang

Jia Ye

Yang Li

Zhibo Yuan

Min-Han Lee

Dixiong Wang

Yi Luo

Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

Gap fill methods using catalyzed deposition

Process chamber pumping liner

Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.

Low resistivity tungsten film and method of manufacture

A structure is provided including a substrate and a tungsten-containing layer. The tungsten-containing layer includes a nucleation layer disposed on the substrate and a bulk layer is disposed over the nucleation layer. The nucleation layer includes tungsten and the bulk layer includes about 0.1% to about 20% atomic molybdenum. The tungsten-containing layer includes a film stress of about 350 MPa to about 450 MPa.

Tungsten molybdenum structures

Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Methods for low resistivity and stress tungsten gap fill

Some embodiments of the disclosure relate to methods for forming a bottom-up tungsten gapfill. Some embodiments of the disclosure relate to methods for reducing the deposition rate of tungsten by chemical vapor deposition. A molybdenum halide precursor is added to a tungsten halide precursor and a reductant. The co-flow of tungsten halide and molybdenum halide demonstrates either reduced or eliminated tungsten growth.

Tungsten gapfill using molybdenum co-flow

Catalyst enhanced molybdenum deposition and gap fill

Methods and apparatus for low resistivity and stress tungsten gap fill

Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

Multi-step pre-clean for selective metal gap fill

Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L(L), wherein M is a metal, Lis an aromatic ligand, Lis an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the Lcomprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.

Catalyst enhanced seamless ruthenium gap fill

The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

Method for forming a metal gapfill

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San Jose, CA, United States of America

Xi Cen