Soitec

Xavier Schneider

Didier Landru

Oleg Kononchuk

Sébastien Kerdiles

Carole David

Christophe Gourdel

Guillaume Chabanne

Francois Boedt

Sebastien Mougel

Aurelia Pierret

Sébastien Mougel

A process comprises the following steps: a) provision of a chamber suitable for receiving a plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in an oxide of a dielectric diffuses through an active layer reacts with semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

Process for manufacturing a plurality of structures

The disclosure relates to a process for manufacturing a composite structure, the process comprising the following steps: a) providing a donor substrate and a carrier substrate; b) forming a dielectric layer; c) forming a covering layer; d) forming a weakened zone in the donor substrate; e) joining the carrier substrate and the donor substrate via a contact surface having an outline; f) fracturing the donor substrate via the weakened zone, steps b) and e) being executed so that the outline is inscribed in the outline, and step c) being executed so that the covering layer covers the peripheral surface of the dielectric layer.

Process for manufacturing a composite structure

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Le Versoud, France

Xavier Schneider