Rf360 Singapore Pte. Ltd.

Epcos Ag

Xavier Perois

Edgar Schmidhammer

Sylvain Ballandras

Alexandre Augusto Shirakawa

Maximilian Schiek

Stefan Leopold Hatzl

Christian Huck

Willi Aigner

Juergen Portmann

Manuel Hofer

Jeroen Bielen

Thomas Mittermaier

Jacques-Antoine Damy

Charles Binninger

Michael Wick

Roland Rosezin

Aimeric Bisognin

An apparatus for filtering is disclosed that implements a double-mode surface-acoustic-wave filter having a transition region with a partly uniform geometric property. In an example aspect, the double-mode surface-acoustic-wave filter includes at least one interdigital transducer with multiple fingers. The multiple fingers include a first set of fingers having a geometric property and a second set of fingers. The second set of fingers is positioned adjacent to the first set of fingers and is associated with an outer edge of the at least one interdigital transducer. The geometric property across a subset of the second set of fingers is substantially uniform. A value of the geometric property across the subset of the second set of fingers is different than a value of the geometric property across the first set of fingers.

Double-mode surface-acoustic-wave (DMS) filter having a transition region with a partly uniform geometric property

A multi-level stacked AW filter package including a first acoustic wave (AW) filter stacked on a second AW filter employs semiconductor fabrication methods and structures, including a metallization layer comprising interconnects to couple a contact surface to the second AW filter. Each AW filter includes an AW filter circuit on a semiconductor substrate. A second substrate disposed on a frame on the substrate protects the AW filter circuit. In a multi-level AW filter package, the second substrate of the first AW filter comprises a glass substrate with a similar expansion rate as the semiconductor substrate. The interconnects coupling the second AW filter to the contact surface are disposed on insulators on the side wall surfaces of the semiconductor substrates of the first AW filter for isolation. In a stacked AW filter package comprising a single AW filter, the interconnects couple the contact surface to the AW filter.

Multi-level stacked acoustic wave (AW) filter packages and related fabrication methods

A BAW resonator (BAWR) with improved power durability and improved heat resistance is provided. The resonator comprises a layer stack with a piezoelectric material (PM) between a bottom electrode (ELI) and a top electrode (EL) and a shunt path parallel (PCPP) to the layer stack provided to enable an RF signal to bypass the layer stack, e.g. to ground (GND). The shunt path (PCPP) has a temperature dependent conductance with a negative temperature coefficient, NTC, of resistance. When the temperature of the device rises due to high power operation, currents that would otherwise permanently damage the device are shunted to ground or another dedicated terminal by the temperature dependent shunt path. Upon cooling down normal operation is resumed.

BAW resonator with improved power durability and heat resistance and RF filter comprising a BAW resonator

An improved electroacoustic component is provided. The component includes a carrier wafer with a passivation layer, a piezoelectric layer above the passivation layer and an interdigitated transducer in an electrode layer on the piezoelectric layer. The component is configured to work with a shear mode.

Electroacoustic components and methods thereof

Growing community of inventors

Mouans Sartoux, France

Xavier Perois