Aledia

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Commissariat a L'energie Atomique

Thales

Commissariat a L'energie Atomique Et Aux Energies

Alcatel Lucent

Xavier Hugon

Ivan-Christophe Robin

Frédéric Mercier

Philippe Gilet

Erwan Dornel

Tiphaine Dupont

Philippe Gibert

Frédéric Mayer

Benoit Giffard

Carlo Cagli

Matthieu Charbonnier

Christophe Bouvier

Yvon Cazaux

Hubert Bono

Sylvia Scaringella

Zine Bouhamri

Emilie Pougeoise

Nacer Aitmani

David Vaufrey

Philippe Bois

Bérangère Hyot

Adrien Gasse

Bruno Mourey

Alexei Tchelnokov

Christophe Kopp

Norbert Moussy

Jean-Luc Reverchon

Eric Pourquier

Olivier Girard

Bernard Andre

Brigitte Soulier

Vincent Beix

Marion Volpert

Emmanuel Petitprez

Thomas Lacave

Philipe Gilet

Denis Renaud

Fabienne Goutaudier

Mickaël Rebaud

A method for protecting optoelectronic devices against electrostatic discharges. Each optoelectronic device includes an electronic circuit including at least one electronic component and one optoelectronic circuit bonded to the electronic circuit and including at last one optoelectronic component from among a light-emitting diode or a photodiode. The method includes forming of first and second wafers, one of the first or second wafer includes a plurality of copies of the electronic circuit and the other one of the first or second wafer including a plurality of copies of the optoelectronic circuit, the bonding of the first wafer to a support, the bonding of the second wafer to the first wafer, and the separation of the electronic devices from one another, wherein the first wafer and/or the second wafer comprises at least one system for protecting optoelectronic devices against electrostatic discharges.

Method for protecting an optoelectronic device from electrostatic discharges

A method of protecting optoelectronic devices against electrostatic discharges, each optoelectronic device comprising an optoelectronic circuit comprising at least one optoelectronic component from among a light-emitting diode or a photodiode. The method comprises forming a first wafer, comprising a plurality of copies of the optoelectronic circuit, bonding the first wafer to a support, separating the optoelectronic devices from one another, and removing from the support a plurality of optoelectronic devices from among said optoelectronic devices by means of a gripping system, wherein the gripping system comprises at least one system for protecting optoelectronic devices against electrostatic discharges.

Method for protecting an optoelectronic device against electrostatic discharges

A light-emitting diodeincludes a first region, for example of the P type, formed in a first layerand forming, in a direction normal to a basal plane, a stack with a second regionhaving at least one quantum well formed in a second layer, and including a third region, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions, through the first and second layers. A process for producing a light-emitting diodein which the third regionis formed by implantation into and through the first and second layers

Light-emitting diode with electrodes on a single face and process of producing the same

An optoelectronic device including an integrated circuit including light-emitting diodes, thin film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes and the transistors, said stack further including conductive elements, between and through said insulating layers, said conductive elements connecting at least some of the transistors to the light-emitting diodes.

Optoelectronic device

An optoelectronic device having a substrate and a plurality of sets of light-emitting diodes where each set includes a plurality of light-emitting diodes, a first lower electrode, a second upper electrode, an electronic component of an electronic circuit formed in a first portion of the substrate, on the side of the face of the substrate that does not bear the light-emitting diodes, and a first conductive means formed through the first portion and electrically connecting a first terminal of the electronic component to one amongst the first and second electrodes. The first conductive means of a given set is electrically-insulated from the first conductive means of the other sets.

Optoelectronic device with electronic components at the level of the rear face of the substrate and manufacturing method

An optoelectronic device, including: a support; at least one first electrically-conductive layer covering the support; display pixel circuits including first and second opposite surfaces bonded to the first electrically-conductive layer, each display pixel circuit including an electronic circuit including the first surface and a third surface opposite to the first surface, the first surface being bonded to the first electrically-conductive layer, and at least one optoelectronic circuit bonded to the third surface and including at least one light-emitting diode, at least one of the electrodes of the light-emitting diode being connected to the electronic circuit by the third surface; at least one second electrically-conductive layer covering the display pixel circuits and electrically coupled to the electronic circuits of the display pixel circuits on the side of the second surface.

A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Method for producing optoelectronic devices comprising light-emitting diodes

A method of controlling an optoelectronic device including display pixels arranged in rows and in columns. The optoelectronic device further includes first electrodes, each connected to the display pixels of at least one row, second electrodes, each connected to the display pixels of at least one column, and a circuit for controlling the first and second electrodes. The method includes, in a first phase, the activation of the display pixels connected to one of the first electrodes and to one of the second electrodes by the following steps, simultaneously carried out: taking one of the first electrodes to a first potential, the other first electrodes being maintained at a second potential smaller than the first potential; and taking one of the second electrodes to a third potential smaller than the second potential, the other second electrodes being maintained at a fourth potential greater than the third potential and smaller than the second potential.

An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.

Opto-electronic device with light-emitting diodes

An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.

Optoelectronic device comprising pixels with improved contrast and brightness

An optoelectronic device including a substrate with first and second opposite surfaces; and electrical insulation side elements extending from the first surface to the second surface and defining, within the substrate, first semi-conductive or conductive portions which are electrically insulated from each other. The optoelectronic device also includes, for each first portion a first conductive contact pad on the second surface in contact with the first portion and a set of light-emitting diodes resting on the first surface and electrically connected to the first portion. The optoelectronic device also includes a conductive, at least partially transparent electrode layer covering all the light-emitting diodes; an insulating, at least partially transparent encapsulation layer covering the electrode layer; and at least one second conductive contact pad electrically connected to the electrode layer.

Optoelectronic device with light-emitting diodes

A light-emitting device comprises a set of nanowires over the whole surface of a substrate, comprising at least a first series of first nanowires and a second series of second nanowires; the first series comprising first nanowires emitting light under electrical control, connected between a first and a second type of electrical contact to emit light under electrical control, the first nanowires covered by at least one conducting layer transparent at the wavelength of the light-emitting device, layer in contact with the first type of electrical contact; the second series comprising second nanowires, encapsulated in a layer of metal allowing the first electrical contact to be formed; the second electrical contact being on the back face of the substrate, opposite to the face comprising the nanowires, and provided by a conducting layer facing the first series of nanowires. A method of fabrication of the light-emitting device is provided.

Light-emitting device comprising active nanowires and contact nanowires and method of fabrication

An optoelectronic circuit including separate interconnected basic electronic circuits, each of which includes at least one light emitting diode and at least one integrated circuit chip that has a circuit for controlling the light emitting diode, the circuit being suitable for activating or deactivating the light emitting diode.

Optoelectronic circuit comprising light emitting diodes

An optoelectronic device including a first integrated circuit that includes:&#x2014;a substrate, having first and second opposite surfaces; and&#x2014;groups of sets of light-emitting diodes resting on the first surface. The integrated circuit also includes:&#x2014;in the substrate, first side elements for electrically insulating portions of the substrate around each set; and&#x2014;for each group on the second surface, at least one first conductive contact, connected to the first terminal of the group, and one second conductive contact, connected to the second terminal of the group. The device includes a second integrated circuit containing:&#x2014;third and fourth opposite surfaces; and&#x2014;third conductive contacts, located on the third surface and electrically connected to the first and second conductive contacts. The first integrated circuit is attached onto the third surface of the second integrated circuit.

Optoelectronic device including light-emitting diodes and a control circuit

Growing community of inventors

Teche, France

Xavier Hugon