Acreo Ab

Acreo Swedish Ict Ab

Rise Acreo Ab

Rise Research Institutes of Sweden Ab

Xavier Crispin

Magnus Berggren

Göran Gustafsson

Nathaniel D Robinson

Mats Sandberg

Daniel Simon

Xin Wang

Oscar Larsson

Olle-Johnny Hagel

Isak Engquist

Lars Herlogsson

Xiaodong Wang

Simone Fabiano

Hui Wang

Peter Andersson-Ersman

Peter Dyreklev

Fei Jiao

Eliot F Gomez

Roger Gabrielsson

Suhao Wang

Andrea Grimoldi

Fareed Ahmed

Mikhail Vagin

Canyan Che

Negar Abdollahi Sani

Naveed Ul Hassan Alvi

Magnus Jonsson

Eleni Stavrinidou

Jun Kawahara

Hjalmar Granberg

The present invention provides thermoelectric device comprising a first electrode, a second electrode, a first electrolyte composition capable of transporting cations, a second electrolyte composition capable of transporting anions and a connector comprising mobile cations and mobile anions, wherein the first electrolyte composition is connected to said first electrode by being in ionic contact and the second electrolyte composition is connected to said second electrode by being in ionic contact and said connector is in ionic contact with said first and said second electrolyte composition, such that an applied temperature difference over said electrolyte compositions or an applied voltage over said electrodes facilitate transport of ions to and/or from said electrodes via said electrolyte compositions. There is also provided a method for generating electric current and a method for generating a temperature difference.

Thermoelectric device

A ferroelectric field-effect transistor device includes: a semiconductor layer; a ferroelectric layer; and an ion conductor layer arranged between the semiconductor layer and the ferroelectric layer and in contact with the semiconductor layer. Methods for producing the ferroelectric field-effect transistor device and using the ferroelectric field-effect transistor device in non-volatile memory devices that reduce a readout voltage to a voltage as low as 0.2 V are also disclosed.

Ferroelectric field-effect transistor

A moisture sensor, for measuring moisture in a building without leaving visible scars to the building surface, is provided. The moisture sensor includes a flexible carrier carrying an antenna for receiving EM-radiation between 9 kHz and 11 MHz and a resonant circuit including a moisture reactive element. The moisture reactive element includes a hygroscopic electrolyte arranged between a first and a second electrode, wherein the electrolyte in the presence of moisture forms mobile ions and provides a complex impedance at least in response to the alternating voltage, which complex impedance varies with the moisture content of the electrolyte.

Moisture sensor

A fast organic field effect transistor (), which operates at low voltages, is achieved by the introduction of an oligomeric or polymeric electrolyte () between the gate electrode () and the organic semiconductor layer (), which electrolyte () has a dissociation constant of at least 10&#x2212;8. Said organic semiconductor layer () is in contact with the source electrode () and the drain electrode () of the transistor. In operation a potential () applied to said gate electrode () controls the current A between said source electrode () and said drain electrode ().

Transistor with large ion-complexes in electrolyte layer

Growing community of inventors

Kimstad, Sweden

Xavier Crispin