Arkema France

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Centre National De La Recherche Scientifique

Universitë De Bordeaux

Université Grenoble Alpes

Institut Polytechnique De Bordeaux

Institut Polytechnique De Bordeaux 1

Xavier Chevalier

Christophe Navarro

Raluca Tiron

Celia Nicolet

Nicolas Posseme

Ahmed Gharbi

Hubert Teyssedre

Julien Buckley

Eric Jalaguier

Ilias Iliopoulos

Maxime Argoud

Laurent Pain

Stéphanie Magnet

Georges Hadziioannou

Cyril Brochon

Patricia Pimenta Barros

Muhammad Mumtaz

Florian Delachat

Stéphanie Gaugiran

Marc Zelsmann

Guillaume Claveau

Guy Royal

Christophe Couderc

Guillaume Fleury

Serge Tedesco

Anne Paquet

Gwenaëlle Pound-Lana

Karim Aissou

Eric Cloutet

A process for transfer imprinting using a novel family of anti-sticking layers, such as for nanoimprint lithography processes, is described.

Process for transfer imprinting

The invention relates to a crosslinkable prepolymer composition for use as a contrast layer. It also relates to a method for structuring an interface material. This method is characterized in particular by the following steps:

Prepolymer composition intended to form a contrast layer and method for structuring an interface material

The invention relates to a method for manufacturing a flat polymeric stack, said stack comprising one or more first and one second layer of (co)polymer () stacked one on the other, the first underlying (co)polymer layer () not having undergone any prior treatment allowing its crosslinking, at least one of the (co)polymer layers initially being in a liquid or viscous state, said method being characterized in that the upper layer (), known as the top coat (TC), is deposited on the first layer () in the form of a prepolymer composition (pre-TC), comprising one or more monomer(s) and/or dimer(s) and/or oligomer(s) and/or polymer(s) in solution, and in that it is then subjected to a heat treatment capable of causing a crosslinking reaction of the molecular chains within said layer (, TC).

Method for producing a planar polymer stack

A method for the directed self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern, the guide pattern having a cavity with a bottom and side walls; forming a functionalisation layer on the guide pattern that has a first portion and a second portion disposed, respectively, on the bottom and side walls of the cavity; forming a protective layer on the first and second portions of the functionalisation layer; etching the protective layer and the second portion of the functionalisation layer such that a portion of the protective layer is retained and the side walls of the cavity are exposed, the retained portion of the protective layer having a thickness of less than 15 nm; selectively etching the portion of the protective layer relative to the first portion of the functionalisation layer and to the guide pattern; and depositing a block copolymer in the cavity.

Method for the directed self-assembly of a block copolymer by graphoepitaxy

A method for forming a functionalised guide pattern, includes forming a functionalisation layer on a substrate; depositing a protective layer on the functionalisation layer; forming a guide pattern on the protective layer that has a cavity opening onto the protective layer and a bottom and side walls; implanting ions with an atomic number of less than 10 in a portion of the protective layer located at the bottom of the cavity, such that the implanted portion can be selectively etched relative to the non-implanted portion; forming, in the cavity, a second functionalisation layer having first and second portions disposed on, respectively, the protective layer at the bottom of the cavity and the side walls of the cavity; and selectively etching the implanted portion and the first portion of the second functionalisation layer, to expose a portion of the functionalisation layer located at the bottom of the cavity.

Method for forming a functionalised guide pattern for a graphoepitaxy method

A method for forming a chemical guiding structure intended for self-assembly of a block copolymer by chemoepitaxy, where the method includes forming on a substrate a functionalisation layer made of a first polymer material having a first chemical affinity with respect to the block copolymer; forming on the substrate guiding patterns made of a second polymer material having a second chemical affinity with respect to the block copolymer, different from the first chemical affinity, and wherein the guiding to patterns have a critical dimension of less than 12.5 nm and are formed by means of a mask comprising spacers.

Method for forming a chemical guiding structure on a substrate and chemoepitaxy method

A method for forming a functionalised guide pattern for the self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern made of a first material having a first chemical affinity for the block copolymer, the guide pattern having a cavity with a bottom and side walls; grafting a functionalisation layer made of a second polymeric material having a second chemical affinity for the block copolymer, the functionalisation layer having a first portion grafted onto the bottom of the cavity and a second portion grafted onto the side walls of the cavity; selectively etching the second portion of the functionalisation layer relative to the first portion of the functionalisation layer, the etching including a step of exposure to an ion beam following a direction that intersects the second portion of the functionalisation layer, such that the ion beam does not reach the first portion of the functionalisation layer.

A method for controlling the synthesis of a block copolymer containing at least two blocks, with at least one nonpolar block and at least one polar block, said method making it possible in particular to control the ratio between the blocks and the molecular weight of each of the blocks, said copolymer being a block copolymer intended to be used as a mask in a method of nanolithography by direct self-assembly (DSA), said control being achieved by semicontinuous anionic polymerization in an aprotic nonpolar medium.

Method for controlling the synthesis of a block copolymer containing at least one nonpolar block and at least one polar block and use of said block copolymer in applications of nanolithography by direct self-assembly

The invention relates to a block copolymer film nanostructured in nanodomains at a predetermined temperature, obtained from a basic block copolymer which is nonstructured at said predetermined temperature, and at least one block of which comprises styrene and at least another block of which comprises methyl methacrylate. The block copolymer film is useful for forming nano-lithography masks.

Process for the nanostructuring of a block copolymer film using a nonstructured block copolymer based on styrene and on methyl methacrylate, and nanostructured block copolymer film

The invention relates to a method for functionalizing an electrically conductive substrate, which is not a substrate made of gold, via a layer of chemical compounds, said method comprising the following steps:

Method for functionalizing a solid substrate, other than a substrate made of gold, via specific chemical compounds

The invention relates to a block copolymer film nanostructured into nanodomains, obtained from a base block copolymer having a molecular weight of greater than 50 kg/mol, and preferably greater than 100 kg/mol and less than 250 kg/mol, and at least one block of which comprises styrene, and at least one other block of which comprises methyl methacrylate. This film is characterized in that the styrene-based block is formed by a copolymer of styrene and diphenylethylene (DPE).

Process for controlling the period of a nanostructured block copolymer film based on styrene and on methyl methacrylate, and nanostructured block copolymer film

The invention concerns a manufacturing method for nanolithography masks from a PS-b-PMMA block copolymer film deposited on a surface to be etched, said copolymer film comprising PMMA nanodomains orientated perpendicularly to the surface to be etched, said method being characterized in that it comprises the following steps:

Method for manufacturing a nanolithography mask

A method for making patterns on the surface of a substrate by graphoepitaxy, includes depositing a layer of resin on the surface of the substrate; making patterns in the resin on the surface of a substrate; curing the patterns in the resin by producing a layer of amorphous carbon on the surface of the patterns in the resin; depositing a layer of statistical copolymer after curing the patterns in the resin; grafting the layer of statistical copolymer onto the patterns in the resin by annealing; and depositing a layer of a block copolymer into the spaces defined by the patterns in the resin after curing the patterns and the grafting of the layer of statistical copolymer.

Method for making patterns on the surface of a substrate using block copolymers

A method for making patterns on a substrate, includes forming an assembly guide on first and second areas of the substrate, the assembly guide having, compared to a reference surface, openings with an opening ratio in the first area greater than that of the second area; depositing a block copolymer layer on the substrate to entirely fill the assembly guide and form an over-thickness on the reference surface; assembling the block copolymer, resulting in an organised portion of the block copolymer layer inside the openings; thinning uniformly the block copolymer layer, until a thickness corresponding to the organised portion of the block copolymer layer is reached; eliminating one of the phases of the assembled block copolymer, resulting in a plurality of initial patterns extending into the layer of block copolymer; and transferring the initial patterns of the block copolymer layer into the substrate to form the final patterns.

Growing community of inventors

Grenoble, France

Xavier Chevalier