Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Soitec

Xavier Blot

Hubert Moriceau

Bruno Imbert

A manufacturing method including supplying a first substrate including a first face designated front face, the front face being made of a III-V type semiconductor, supplying a second substrate, forming a radical oxide layer on the front face of the first substrate by executing a radical oxidation, assembling, by a step of direct bonding, the first substrate and the second substrate so as to form an assembly including the radical oxide layer intercalated between the first and second substrates, executing a heat treatment intended to reinforce the assembly interface, and making disappear, at least partially, the radical oxide layer.

Method for direct bonding of III-V semiconductor substrates with a radical oxide layer

The invention concerns an assembly method comprising the following steps: a) providing a first substrate comprising a first face made from crystalline indium phosphide, b) providing a second substrate comprising a second crystalline face different from the indium phosphide, c) forming an intermediate layer of crystalline indium phosphide on the second face of the second substrate, d) forming an assembly, via a direct bonding step, by bringing the first face of the first substrate into contact with the intermediate layer, the direct bonding step being carried out in an atmosphere having a pressure greater than 10&#x2212;4 Pa, and preferably higher than 10&#x2212;3 Pa, e) subjecting the assembly formed in step d) to heat treatment.

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Grenoble, France

Xavier Blot