Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Centre National De La Recherche Scientifique

Université Grenoble Alpes

Institut Polytechnique De Grenoble

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Xavier Baillin

Jean-Louis Pornin

Stéphane Caplet

Thierry Hilt

Patrick Leduc

Nicolas Sillon

Christine Ferrandon

Frank Fournel

Sami Oukassi

Bernard Diem

Jean Brun

Henri Sibuet

Jean-Charles Souriau

Patrick Reynaud

Emmanuel Ollier

David Henry

Laurent Vandroux

Emmanuel Rolland

Loic Sanchez

Jean-Philippe Polizzi

Haykel Ben Jamaa

Stephane Nicolas

Charlotte Gillot

Ulrich Soupremanien

Emmanuelle Lagoutte

Guillaume Rodriguez

Andre Rouzaud

Séverine Cheramy

Thierry Enot

Aurelie Thuaire

Bassem Salem

Stéphane Nicolas

Aurélie Thuaire

Clément Lausecker

Didier Gaspuratto

André Rouzaud

A flexible electronic structure includes a first film, made of a first polymer or glass, and a second film, made of a second polymer, in which at least one electronic component is arranged. The second film covers the first film. The flexible electronic structure also includes at least one electrically conductive track arranged between the first film and the second film, and each electrically connected to one of the electronic components, by a respective interconnection element. Optionally, the flexible electronic structure includes a third film, made of a third polymer or glass, covering the second film. The interconnection element is arranged near the neutral plane of the structure, and the structure includes at least one compensation layer, so as to position the neutral plane at a desired location.

Flexible electronic structure and method for producing same

This invention relates to a microelectronic device comprising: a first support, a second support, first respective faces of the first support and second support being arranged opposite, and a sealing layer between said first faces, characterized in that the sealing layer comprises at least one layer of an ionic conductive material of formula LiPON, with x strictly greater than 0 and less than or equal to 4.5, y strictly greater than 0 and less than or equal to 1, z strictly greater than 0 and less than or equal to 5.5, w greater than or equal to 0 and less than or equal to 1.

Microelectronic device

A method for direct bonding an electronic chip onto a substrate or another electronic chip, the method including: carrying out a hydrophilic treatment of a portion of, a surface of the electronic chip and of a portion of a surface of the substrate or of the other electronic chip; depositing an aqueous fluid on the portion of the surface of the substrate or of the second electronic chip; depositing the portion of the surface of the electronic chip on the aqueous fluid; drying the aqueous fluid until the portion of the surface of the electronic chip is rigidly connected to the portion of the surface of the substrate or of the other electronic chip: and during at least part of the drying of the aqueous fluid, emitting ultrasound into the aqueous fluid through the substrate or the other electronic chip.

Method for direct bonding with self-alignment using ultrasound

There is provided a device for cooling a component, including a support configured to receive a component to be cooled, the support including a fluid network configured for liquid circulation therein, the network including a first cavity, a second cavity, and a first channel connecting the first cavity to the second cavity, a first deformable membrane and a second deformable membrane configured to form a mobile wall of the first cavity and a mobile wall of the second cavity respectively, the device further including an actuating device configured to actuate the first membrane and the second membrane, and a thermal conducting element close to the channel or in contact with the channel.

Cooling device for electronic components using liquid coolant

A device used for cooling a component including a support to receive a component to be cooled, is provided. The support includes a fluid network in which a liquid will circulate. The network includes a first cavity, a second cavity, and a first channel connecting the first cavity to the second cavity, a first deformable membrane and a second deformable membrane forming a mobile wall of the first cavity and a mobile wall of the second cavity respectively. The device further an actuation device for actuating the first membrane and the second membrane, the actuating device including a fixed electrode located on one or several protuberances of the support.

A getter structure is provided, including a support; a first layer of getter material disposed on the support a second layer of getter material, the first layer of getter material being disposed between the support and the second layer of getter material; a first portion of material mechanically connecting a first face of the second layer of getter material to a first face of the first layer of getter material and forming at least one first space between the first faces of the first and second layers of getter material configured to allow a circulation of gas between the first faces of the first and second layers of getter material; and a first opening crossing through at least the second layer of getter material and emerging into the first space.

Multi-level getter structure and encapsulation structure comprising such a multi-level getter structure

Manufacturing of a device to connect at least one nano-object to an external electrical system, comprising a support provided with a semiconducting layer in which the first doped zones are formed at a spacing from each other, an external electrical system being connectable to the first doped zones, each first doped zone (8, 8) being in contact with a second doped zone on which a portion of the nano-object is located, the second doped zones being separated from each other and with a thickness less than the thickness of the first doped zones.

Device for connecting at least one nano-object and method of manufacturing it

Receiving structure for electrically connecting a nano-object on a surface thereof and re-establish electrical contact with the nano-object on the opposite surface, and methods for manufacturing the structure. The invention, that can be used for molecular characterisation, makes use of a support () to connect a nano-object () onto its top face and continue the electrical contact on its bottom face. At least two interconnects () pass through the support. The two faces of the support comprise contact continuity zones () for the interconnects. According to the invention, at least the zones () in the top face are doped zones each having a pattern adapted to the fan out of the interconnect associated with it, on this face.

Receiving structure for electrically connecting a nano-object on a surface thereof and re-establish electrical contact with the nano-object on the opposite surface, and methods for manufacturing the structure

Method for encapsulating a microelectronic device, comprising the following steps:

Method for encapsulating a microelectronic device with a release hole of variable dimension

Structure with several cavities provided with access channels of different heights

A microdevice encapsulation structure arranged in at least one cavity formed between a substrate and a cap rigidly attached to the substrate is provided, the cap including one layer of a first material, one face of which forms an inner wall of the cavity, and mechanical reinforcement portions rigidly attached at least to and partly covering said face, having gas absorption and/or adsorption properties, in which the Young's modulus of a second material of the mechanical reinforcement portions is higher than that of the first material, wherein each of said portions includes at least one first layer of the second material, and at least one second layer of a third metallic getter material such that the first layer of the second material is arranged between the layer of the first material and the second layer of the third material and/or is covered by the second layer of the third material.

Encapsulation structure including a mechanically reinforced cap and with a getter effect

This structure, that is applicable particularly to manufacturing of &#x3c;&#x3c;Beyond CMOS&#x3e;&#x3e; type systems comprises a substrate () with opposite first and second faces, a cap () with opposite first and second faces, the first face of the cap being fixed to the first face of the substrate, at least one cavity () defined between the cap and the substrate, at least one nano-object () in the cavity, and first doped zones () that are formed in the substrate, on the first face of the substrate, the nano-object being electrically connected to the first doped zones. According to the invention, the structure also comprises second doped zones () that are formed in the cap, on the first face of the cap and that are at least partially in direct contact with the first doped zones, and means of making contact () between the first and the second face of the cap and that open up on the second doped zones.

Encapsulation structure provided with a cap and a substrate to connect at least one nano-object onto a face of the substrate and to resume contact through the cap and method of manufacturing the structure

An encapsulation structure comprising at least:

Encapsulation structure comprising trenches partially filled with getter material

A method of encapsulating a microelectronic device arranged on a substrate, comprising at least the following steps: a) formation of a portion of sacrificial material covering at least one part of the microelectronic device, the volume of which occupies a space intended to form at least one part of a cavity in which the device is intended to be encapsulated; b) deposition of a layer based on at least one getter material, covering at least one part of the portion of sacrificial material; c) formation of at least one orifice through at least the layer of getter material, forming an access to the portion of sacrificial material; d) elimination of the portion of sacrificial material via the orifice, forming the cavity in which the microelectronic device is encapsulated; and e) sealing of the cavity.

Method of encapsulating a microelectronic device by a getter material

Getter structure comprising a substrate and at least one getter material-based layer mechanically connected to the substrate by means of at least one support, in which the surface of the support in contact with the substrate is smaller than the surface of a first face of the getter material layer, in which said first face is in contact with the support, and a second face of the getter material layer, opposite said first face is at least partially exposed.

Suspended getter material-based structure

Growing community of inventors

Crolles, France

Xavier Baillin