International Business Machines Corporation

Globalfoundries Inc.

Shin-etsu Chemical Co., Ltd.

Other

Infineon Technologies Ag

Globalfounries Inc.

Shipley Company, L.l.c. of Marlborough

Rohm & Haas Electronic Materials LLC

Wu-Song S Huang

Kuang-Jung Chen

Pushkara Rao Varanasi

Wai-Kin Li

Marie Angelopoulos

Wayne Martin Moreau

Ratnam Sooriyakumaran

Sen Liu

David Robert Medeiros

Martin Glodde

Ranee W Kwong

Ahmad D Katnani

Mahmoud M Khojasteh

Steven J Holmes

Libor Vyklicky

Karen Elizabeth Petrillo

Ranee Wai-Ling Kwong

Qinghuang Lin

Dario Leonardo Goldfarb

Ari Aviram

Sean David Burns

Robert Neal Lang

James J Bucchignano

Robert David Allen

Dirk Pfeiffer

Seiichiro Tachibana

Wenjie Li

C Richard Guarnieri

Irene Popova

Takeshi Kinsho

Phillip Joe Brock

William R Brunsvold

Margaret C Lawson

Ronald Anthony DellaGuardia

Kaushal S Patel

Tsutomu Ogihara

James F Cameron

Jane M Shaw

George Frederick Walker

Gregory Breyta

Arpan Pravin Mahorowala

Richard D Kaplan

George J Hefferon

Karen Temple

Nageshwer Rao Bantu

Stanley E Perreault

Sampath Purushothaman

Masaki Ohashi

Matthew Earl Colburn

Roy Rongqing Yu

Kim Yang Lee

James W Thackeray

Hiroyuki Miyazoe

Gregory Michael Wallraff

Timothy A Brunner

Hsinyu Tsai

Alshakim Nelson

Takafumi Ueda

Paul A Rabidoux

Hoa D Truong

Lidija Sekaric

Kazumi Noda

George W Orsula

Herman Russell Wendt

Blake W Davis

Raman Gobichettipalayam Viswanathan

Mark Charles Hakey

Igor Y Khandros

Takeru Watanabe

Ping-Chuan Wang

Kafai Lai

Hiroshi Ito

Leathen Shi

Ravi F Saraf

Joy Cheng

Yiheng Xu

Katherina E Babich

Roger F Sinta

Scott David Halle

Harold G Linde

Jaione Tirapu Azpiroz

Sally Ann Swanson

Frances Anne Houle

Ricardo Alves Donaton

Chandrasekhar Sarma

John Paul Amara

Willard E Conley

Jin Wuk Sung

Gregory P Prokopowicz

Christopher Karl Magg

Ronald Wayne Nunes

Charles Arthur Whiting

Yoshinori Taneda

Jae M Park

Shozo Shirai

Alexander M Friz

Bernhard R Liegl

Gregory R McIntyre

James Michael Mori

David A Valeri

Organic coating compositions, particularly antireflective coating compositions, are provided that can be developed with an aqueous alkaline developer, including in a single step during development of an overcoated photoresist layer. Preferred coating compositions comprise a tetrapolymer that comprises at least four distinct functional groups.

Coating compositions suitable for use with an overcoated photoresist

A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Near-infrared absorbing film compositions

An silicon-containing antireflective coating (SiARC) material is applied on a substrate. The SiARC material which includes a base polymer and may include a boron silicate polymer including silsesquioxane. An etch sequence is utilized, which includes a first wet etch employing a basic solution, a second wet etch employing an acidic solution, and a third wet etch employing another basic solution. The first wet etch can be employed to break up the boron silicate polymer, and the second wet etch can remove the base polymer material, and the third wet etch can remove the residual boron silicate polymer and other residual materials. The SiARC material can be removed from a substrate employing the etch sequence, and the substrate can be reused for monitoring purposes.

Wet strip process for an antireflective coating layer

Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.

Method of forming semiconductor structures with contact holes

A silicon-containing antireflective coating formulation comprising: (i) an aqueous base insoluble organosilicon component having a multiplicity of hydrocarbon groups derivatized with hydroxy groups in the absence of Si&#x2014;O&#x2014;C and Si&#x2014;O&#x2014;H moieties; (ii) a vinylether component having a multiplicity of vinylether groups; and (iii) a casting solvent. Also disclosed is a method for converting the silicon-containing antireflective coating formulation into a crosslinked silicon-containing antireflective film comprising organosilicon units interconnected by acetal or ketal groups. The method entails (a) coating a substrate with the silicon-containing antireflective coating formulation and (b) heating the coated substrate to a temperature at which crosslinking between the organosilicon silicon component and vinylether component occurs. Further disclosed is a method for patterning an antireflective coating on a substrate using the crosslinked silicon-containing antireflective film in a lithographic patterning process wherein the crosslinked silicon-containing antireflective film is situated between the substrate and a photoresist.

Acid-strippable silicon-containing antireflective coating

A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on titanium-silicon (TiSi) polymer or oligomer as a tone inversion material is provided. The spin-on TiSi material is spin-coated over a patterned OPL that includes a first pattern generated from a DSA based process. The spin-on TiSi material fill trenches within the patterned OPL to form a tone inverted pattern by removing the patterned OPL selective to the spin-on TiSi material. The inverted pattern is a complementary pattern to the first pattern, and is transferred into the underlying hard mask material by an anisotropic etch.

Dielectric tone inversion materials

A method to mitigate resist pattern critical dimension (CD) variation in a double-exposure process generally includes forming a photoresist layer over a substrate; exposing the photoresist layer to a first radiation; developing the photoresist layer to form a first pattern in the photoresist layer; forming a topcoat layer over the photoresist layer; exposing the topcoat layer and the photoresist layer to a second radiation; removing the topcoat layer; and developing the photoresist layer to form a second pattern in the photoresist layer.

Method to mitigate resist pattern critical dimension variation in a double-exposure process

A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer comprising at least one acid labile group, a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and of generating a second amount of acid upon exposure to a second dose of radiation, and a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose of radiation and of generating a second amount of base upon exposure to the second dose of radiation. The photosensitive acid generator includes (trifluoro-methylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboximide (MDT), N-hydroxy-naphthalimide dodecane sulfonate (DDSN), or a combination thereof. The photosensitive base generator includes a quaternary ammonium salt.

Exposure photolithography methods

A composition comprising (A) a near-infrared absorbing dye of formula (1), (B) a polymer, and (C) a solvent is used to form a near-infrared absorptive layer. In formula (1), Rand Rare a monovalent hydrocarbon group which may contain a heteroatom, k is 0 to 5, m is 0 or 1, n is 1 or 2, Z is oxygen, sulfur or C(R')(R&#x2033;), R&#x2032; and R&#x2033; are hydrogen or a monovalent hydrocarbon group which may contain a heteroatom, and Xis an anion. 

Near-infrared absorptive layer-forming composition and multilayer film

The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

Developable bottom antireflective coating composition and pattern forming method using thereof

Embodiments include a silicon-containing antireflective material including a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiObackground, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes having acid labile side groups linked to hydrophilic groups Exemplary acid labile side groups may include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals, Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides. Embodiments further include lithographic structures including an organic anti-reflective layer, the above-described silicon-containing anti-reflective layer above the organic anti-reflective layer, and a photoresist layer above the above-described silicon-containing anti-reflective layer. Embodiments further include a method of forming a lithographic structure utilizing the above-described silicon-containing anti-reflective layer.

Silicon-containing antireflective coatings including non-polymeric silsesquioxanes

The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.

Hybrid photoresist composition and pattern forming method using thereof

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Brewster, NY, United States of America

Wu-Song S Huang