Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Wu Ding

Songshan Li

Provided is a display panel including a substrate layer, an active layer, a first insulating layer, a first metal layer, a second insulating layer, and a second metal layer that are stacked. The second metal layer located in a display area of the display panel comprises a first portion and a second portion, and the second metal layer located in a non-display area of the display panel comprises a third portion, wherein a thickness of the first portion of the second metal layer is less than thicknesses of the second portion and the third portion of the second metal layer.

Display panel and fabrication method thereof

An organic light emitting diode (OLED) display panel and manufacturing method thereof are provided. The display panel includes a substrate, a thin film transistor layer, and a light emitting structure, wherein the thin film transistor layer includes a polysilicon layer, a gate dielectric layer positioned on the polysilicon layer, a gate metal layer positioned on the gate dielectric layer, a gate buffer layer positioned on the gate dielectric layer, and an interlayer dielectric layer covering the gate dielectric layer, the gate metal layer, and the gate buffer layer.

Organic light emitting diode display panel and manufacturing method thereof

The present disclosure provides an organic light emitting diode (OLED) display panel and a method for manufacturing same. The OLED display panel includes a substrate, a thermal insulating layer, a buffer, a driving TFT, and a storage capacitor. The substrate includes an arrangement area. The thermal insulating layer is disposed in the arrangement area. The buffer layer is disposed on the substrate. Both the driving TFT and the storage capacitor are disposed on the buffer layer to correspond to the arrangement area. According to the present disclosure, the thermal insulating layer prevents heat in the amorphous silicon layer from dissipating rapidly when an annealing treatment is performed for the amorphous silicon layer to have amorphous silicon crystallize.

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Hubei, China

Wu Ding