Visera Technologies Company Limited

Industrial Technology Research Institute

Semileds Optoelectronics Co., Ltd.

Wu-Cheng Kuo

Yu-Kun Hsiao

Chin-Chuan Hsieh

Kuo-Feng Lin

Chung-Hao Lin

Hsiao-Wen Lee

Jui-Ping Weng

Shih-Yi Wen

Tsung-Lin Wu

Bing-Ru Chen

Ming-Hung Chen

Zong-Ru Tu

Tzu-Han Lin

Kuo-Ching Chang

Yu-Jen Chen

Hung-Lieh Hu

Wei-Ko Wang

Ya-Hui Chiang

Tzy-Ying Lin

Chun-Chiang Yen

Hao-Min Chen

Hsin-Wei Mao

Kuang-Peng Lin

Yu-Han Chien

Wen-I Wu

Kuo-Hsiang Chen

Chen-Yu Weng

Yeh-I Su

An image sensor is provided. The image sensor includes a substrate having a first region and a second region adjacent to each other; and a first photoelectric conversion component disposed on the first region of the substrate, and the first photoelectric conversion component includes: a first metal layer formed on the substrate; a first photoelectric conversion layer formed on the first metal layer; and a second metal layer formed on the first photoelectric conversion layer.

Image sensor

An image sensor is provided. The image sensor includes a microlens array having a plurality of microlenses; and a sensor array having a plurality of photoelectric elements that are arranged into a plurality of macro pixels. Each macro pixel includes a first photoelectric element, a second photoelectric element, a third photoelectric element, and a fourth photoelectric element that receive incident light via a first microlens, a second microlens, a third microlens, and a fourth lens in the plurality of microlenses. The first microlens, the second microlens, the third microlens, and the fourth microlens in each macro pixel have a first initial offset, a second initial offset, a third initial offset, and a fourth initial offset, respectively. The first microlens and the second microlens in each of the plurality of macro pixels further have a first additional offset and a second additional offset, respectively.

Image sensor with shifted microlens array

An image sensor includes a sensing layer, a number of filter units, and a grid structure. The filter units are disposed on the sensing layer. The grid structure is disposed on the sensing layer and surrounding each of the filter units. The grid structure includes a first partition wall disposed on the sensing layer and located between two adjacent filter units, and a second partition wall disposed on the first partition wall located between the two adjacent filter units. The refractive index of the first partition wall is less than the refractive index of the second partition wall.

An image sensor package includes a medium layer having a first surface and a second surface opposite to the first surface. The image sensor package also includes a metal-insulator-metal structure disposed on the first surface of the medium layer. The metal-insulator-metal structure includes a first metal layer, a first insulating layer, and a second metal layer, and the first insulating layer is disposed between the first metal layer and the second metal layer. The image sensor package further includes an optical filter disposed on the second surface of the medium layer.

Image sensor packages

An image sensor includes a sensing layer for sensing a light beam and a number of pixel groups. Each of the pixel groups includes a yellow filter unit allowing a green light component and a red light component of the light beam to pass through, a green filter unit allowing the green light component of the light beam to pass through, and a blue filter unit allowing a blue light component of the light beam to pass through.

Image sensor having yellow filter units

An image sensor includes a sensing layer, a transparent plate, and a first guided-mode resonance structure. The sensing layer includes sensing units configured to sense a light beam. The transparent plate is located above the sensing layer. The first guided-mode resonance structure is disposed on a first area of the transparent plate, and blocks a first waveband of the light beam from passing through.

Image sensor and image capture device

The present invention provides an image sensor, including: a sensor array layer formed of a plurality of normal sensor units and a plurality of spectrometer sensor units; a first guided mode resonance (GMR) structure having a first grating pitch and disposed on the sensor array layer to cover N (where N is an integer) of the spectrometer sensor units; a second GMR structure having a second grating pitch and disposed on the sensor array layer to cover N of the spectrometer sensor units; and a plurality of color filter units disposed on the sensor array layer to cover the normal sensor units.

An image sensor includes a sensing layer, filter units, and a grid structure. The filter units are disposed on the sensing layer. The grid structure is disposed on the filter units, and includes grating portions. The grating portions form a number of grating groups, and each of the grating groups is separated from each other.

An image sensor includes a sensing layer, a filter unit, and a conductive layer. The filter unit is disposed on the sensing layer. The conductive layer surrounds the filter unit, and is disposed on the sensing layer. Therefore, light passing through the filter unit and falling on an adjacent sensing unit is minimized, and the image quality of the image sensor is improved.

Camera device having an image sensor comprising a conductive layer and a reflection layer stacked together to form a light pipe structure accommodating a filter unit

A color correction device for an image sensor is provided. The image sensor is divided into regions. The color correction device includes a quantum efficiency (QE) measurement circuit, an addressing circuit, and a correction circuit. The QE measurement circuit generates a color signal according to a sensing signal from each pixel of the image sensor. The addressing circuit receives the color signal corresponding to each pixel, obtains a location of each pixel on the image sensor, and averages all of the color signals corresponding to the pixels whose locations are disposed in one of the regions to obtain an average color signal. The correction circuit receives the average color signal to obtain a color correction matrix of the one of the regions and corrects the color signals of the pixels whose locations are in the one of the regions by the color correction matrix.

Color correction devices and methods

An imaging apparatus includes a filter, a first image sensor and a second image sensor. The filter transmits a first light in a range of wavelengths and reflects a reflected light out of the range of wavelengths. An incident light is split to the first light and the reflected light. The first image sensor receives the first light to generate a first image signal. The second image sensor receives the reflected light to generate a second image signal.

Imaging capture apparatus having plurality of image sensors generating respective image signals based on emitted light areas

A method for correcting pixel information of color pixels on a color filter array of an image sensor includes: establishing an M&#xd7;M distance factor table, selecting M&#xd7;M pixels of the color filter array, calculating a red/green/blue-color contribution from the red/green/blue pixels to a target pixel in the selected M&#xd7;M pixels, calculating a red/blue/green-color pixel performance of the target pixel, calculating a red/blue/green-color correcting factor, obtaining a corrected pixel information of each of the red/green/blue pixels, by applying the red/green/blue-color correcting factor to the measured pixel information of each of the red/green/blue pixels.

Method for correcting pixel information of color pixels on a color filter array of an image sensor

The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate.

Light emitting semiconductor structure

A light-emitting diode package is provided. The light-emitting diode package comprises a substrate and a first metal layer disposed over the substrate. A solder layer is disposed on the first metal layer and a light-emitting diode chip is disposed on the solder layer, wherein the light-emitting diode chip comprises a conductive substrate and a multilayered epitaxial structure formed on the conductive substrate, and wherein the conductive substrate is adjacent to the solder layer.

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Hsin-Chu, Taiwan

Wu-Cheng Kuo