Asml Netherlands B.v.

Wouter Joep Engelen

Andrey Alexandrovich Nikipelov

Erik Roelof Loopstra

Vadim Yevgenyevich Banine

Pieter Willem Herman De Jager

Olav Waldemar Vladimir Frijns

Gosse Charles De Vries

Johannes Antonius Gerardus Akkermans

Leonardus Adrianus Gerardus Grimminck

Marcus Adrianus Van De Kerkhof

Pieter-Jan Van Zwol

Laurentius Cornelius De Winter

Teis Johan Coenen

Pieter Cristiaan De Groot

Petrus Rutgerus Bartraij

Andelko Katalenic

Johannes Jacobus Matheus Baselmans

Jozef Maria Finders

Han-Kwang Nienhuys

Borgert Kruizinga

Robbert Jan Voogd

Gerrit Jacobus Hendrik Brussaard

Otger Jan Luiten

Rilpho Ludovicus Donker

Maksym Yuriiovych Sladkov

Gerard Frans Jozef Schasfoort

Manfred Petrus Johannes Maria Dikkers

Stefan Michael Bruno Baumer

Franciscus Johannes Joseph Janssen

Ramon Pascal Van Gorkom

Michael Jozef Mathijs Renkens

Wilhelmus Patrick Elisabeth Maria Op 't Root

Alexey Olegovich Polyakov

Yassin Chowdhury

Gijsbertus Geert Poorter

Vladimir Litvinenko

Wilhelmus Patrick Elisabeth Maria Op'T Root

Vahid Mohammadi

Marcel Johannes Petrus Theodorus Van Der Hoorn

Lucas Johannes Peter Ament

Petrus Bartraij

Leonardus Grimminck

Lucas Ament

Franciscus Janssen

Olav Frijns

Michael Renkens

Pieter De Jager

Johannes Akkermans

A first diffusor configured to receive and transmit radiation has a plurality of layers, each layer arranged to change an angular distribution of EUV radiation passing through it differently. A second diffusor configured to receive and transmit radiation has a first layer and a second layer. The first layer is formed from a first material, the first layer including a nanostructure on at least one surface of the first layer. The second layer is formed from a second material adjacent to the at least one surface of the first layer such that the second layer also includes a nanostructure. The second material has a refractive index that is different to a refractive index of the first layer. The diffusors may be configured to receive and transmit EUV radiation.

Transmissive diffusor

A radiation filter for reducing transmission of an unwanted wavelength of radiation. The radiation filter includes zirconium and SiN. The radiation filter may form part of a radiation sensor including a passivation layer arranged to receive radiation transmitted by the radiation filter, a photodiode arranged to receive radiation transmitted by the passivation layer, and circuit elements connected to the photodiode. The radiation sensor may perform optical measurements as part of an extreme ultraviolet lithographic apparatus or a lithographic tool.

Radiation filter for a radiation sensor

A method of patterning lithographic substrates, the method including using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.

Lithographic method

A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.

Patterning device

A delivery system for use within a lithographic system. The beam delivery system comprises optical elements arranged to receive a radiation beam from a radiation source and to reflect portions of radiation along one or more directions to form a one or more branch radiation beams for provision to one or more tools.

Beam delivery apparatus and method

An electron source, e.g. for a free electron laser used for EUV lithography comprises: &#x2022; a cathode () configured to be connected to a negative potential (); &#x2022; a laser () configured to direct pulses of radiation onto the cathode so as to cause the cathode to emit bunches of electrons; &#x2022; an RF booster () connected to an RF source and configured to accelerate the bunches of electrons; and &#x2022; a timing corrector () configured to correct the time of arrival of bunches of electrons at the RF booster relative to the RF voltage provided by the RF source. The timing corrector may comprise a correction electrode () surrounding a path of the bunches of electrons from the cathode to the RF booster and a correction voltage source () configured to apply a correction voltage to the correction electrode.

Electron source for a free electron laser

A method of patterning lithographic substrates, the method comprising using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further comprises reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.

A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.

Electron injector and free electron laser

Passage through LINACs of electron bunches in their acceleration phase is coordinated with passage through the LINACs of electron bunches in their deceleration phase. Each successive pair of electron bunches are spaced in time by a respective bunch spacing, in accordance with a repeating electron bunch sequence. The electron source provides clearing gaps in the electron bunch sequence to allow clearing of ions at the undulator. The electron source provides the clearing gaps in accordance with a clearing gap sequence such that, for each of the plurality of energy recovery LINACS, and for substantially all of the clearing gaps: for each passage of the clearing gap through the LINAC in an acceleration phase or deceleration phase the clearing gap is coordinated with a further one of the clearing gaps passing through the LINAC in a deceleration phase or acceleration phase thereby to maintain energy recovery operation of the LINAC.

Radiation source

A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.

An injector arrangement for providing an electron beam. The injector arrangement comprises a first injector for providing electron bunches, and a second injector for providing electrons bunches. The injector arrangement is operable in a first mode in which the electron beam comprises electron bunches provided by the first injector only and a second mode in which the electron beam comprises electron bunches provided by the second injector only.

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Veldhoven, Netherlands

Wouter Joep Engelen