Asml Netherlands B.v.

Wouter Frans Willem Mulckhuyse

Patricius Aloysius Jacobus Tinnemans

Pieter Willem Herman De Jager

Erwin John Van Zwet

Lambertus Gerardus Maria Kessels

Coen Adrianus Verschuren

Willem Jurrianus Venema

Erwin Paul Smakman

Theodorus Leonardus Van Den Akker

Marcel Bontekoe

Robert Albertus Johannes Van Der Werf

Marco Cornelis Jacobus Martinus Van Hassel

Pieter Verhoeff

An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including a plurality of two-dimensional arrays of radiation sources, each radiation source configured to emit a radiation beam; a projection system configured to project the modulated radiation onto the substrate, the projection system including a plurality of optical elements arranged side by side and arranged such that a two-dimensional array of radiation beams from a two-dimensional array of radiation sources impinges a single optical element of the plurality of optical elements; and an actuator configured to provide relative motion between the substrate and the plurality of two-dimensional arrays of radiation sources in a scanning direction to expose the substrate.

Method and apparatus for direct write maskless lithography

An exposure apparatus configured to project each of a plurality of radiation beams onto a respective location on a target, the plurality of radiation beams forming a desired dose pattern via a plurality of spot exposures, the nominal position of a characteristic point in the dose distribution of each of the spot exposures lying at points defining a first grid. The apparatus has, or is provided data from, a controller configured to: calculate a target intensity value for each of the plurality of radiation beams to expose the target to the desired dose pattern, the calculation using as input a rasterized representation of the desired dose pattern, the rasterized representation including a dose value defined at each of a plurality of points on a second grid, the first and second grids having the same geometry, and control the exposure apparatus to emit beams with the target intensity values.

Lithography apparatus, an apparatus for providing setpoint data, a device manufacturing method, a method of calculating setpoint data and a computer program

A system for controlling a patterning device in a lithographic apparatus using a patterning device having individually controllable elements that may only be set to two states. The method includes converting a representation of a pattern to be formed on the substrate into a plurality of area intensity signals, each corresponding to a radiation intensity level required to be set in a respective area of the patterning device in order to provide the desired pattern on the substrate and a separate step of converting each of the area intensity signals into control signals for a plurality of individually controllable elements that each correspond to the area of the patterning device.

Method of controlling a patterning device in a lithographic apparatus, device manufacturing method and lithographic apparatus

A lithographic system comprises an array of individually controllable elements, a projection system, datapath hardware, and a conversion system. The array of individually controllable elements is capable of modulating a radiation beam. The projection system is configured to project the modulated radiation beam onto a target portion of a substrate. The datapath hardware converts an input pattern file into a control signal for controlling the array of individually controllable elements. The conversion system is configured to convert a requested device layout pattern into an input pattern file for the datapath hardware. The input pattern file is a spatial-frequency-restricted representation of the requested device layout pattern.

Lithographic system, device manufacturing method, and mask optimization method

A lithography apparatus including a projection system configured to project a beam of radiation as an array of sub-beams of radiation and an array of individually controllable elements configured to modulate the sub-beams of radiation to form a requested dose pattern on a substrate. The requested dose pattern is built up over time from an array of localized exposures in which at least neighboring localized exposures are imaged at substantially different times and in which each localized exposure is produced by one of the sub-beams of radiation. The lithography apparatus also includes a rasterizer device arranged to convert data defining the requested dose pattern to a sequence of data representing the requested dose at a corresponding sequence of points within the pattern, and also a data manipulation device arranged to receive the sequence of data and constitute a control signal suitable for controlling the array of individually controllable elements.

Lithographic apparatus and device manufacturing method

A lithographic apparatus in which a size and/or a position of features formed on a substrate are adjusted by adjusting an intensity of radiation at boundaries of pattern features.

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Bussum, Netherlands

Wouter Frans Willem Mulckhuyse