Asml Netherlands B.v.

Koninklijke Philips Corporation N.v.

Koninklijke Philips Electronics B.v.

Wouter Anthon Soer

Maarten Marinus Johannes Wilhelmus Van Herpen

Vadim Yevgenyevich Banine

Martin Jacobus Johan Jak

Andrei Mikhailovich Yakunin

Kurt Gielissen

Derk Jan Wilfred Klunder

Johannes Hubertus Josephina Moors

Olav Waldemar Vladimir Frijns

Johannes Christiaan Leonardus Franken

Niels Machiel Driessen

Erik Roelof Loopstra

Tjarko Adriaan Rudolf Van Empel

Lucas Henricus Johannes Stevens

Bastiaan Theodoor Wolschrijn

Thomas Stein

Yurii Victorovitch Sidelnikov

Marc Hubertus Lorenz Van Der Velden

Johannes Peterus Henricus De Kuster

Andrey Mikhailovich Yakunin

Ronald Dekker

Theodorus Petrus Maria Cadee

Vladimir Vitalevitch Ivanov

Edwin Johan Buis

Vladimir Mihailovitch Krivtsun

Konstantin Nikolaevitch Koshelev

Denny Mathew

Arnoud Cornelis Wassink

Hendrik Jan Kettelarij

Paul Peter Anna Antonius Brom

Fredericus Christiaan Van Den Heuvel

Petrus Elizabeth Maria Kuijpers

Derek Jan Wilfred Klunder

Maarten Van Herpen

Andrey Yakunin

Martin Jak

Andrey Mikhailovich Yakurin

A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from a material having a bulk reflectance of substantially greater than or equal to 70% at the first wavelength of radiation. The material has a melting point above 1000&#xb0; C.

Spectral purity filter

A source module for use in a lithographic apparatus is constructed to generate extreme ultra violet (EUV) and secondary radiation, and includes a buffer gas configured to cooperate with a source of the EUV radiation. The buffer gas has at least 50% transmission for the EUV radiation and at least 70% absorption for the secondary radiation.

Source module of an EUV lithographic apparatus, lithographic apparatus, and method for manufacturing a device

A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures configured to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. Each aperture has been manufactured by an anisotropic etching process.

Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter

A spectral purity filter is configured to allow transmission therethrough of extreme ultraviolet (EUV) radiation and to refract or reflect non-EUV secondary radiation. The spectral purity filter may be part of a source module and/or a lithographic apparatus.

Spectral purity filter, radiation source, lithographic apparatus, and device manufacturing method

According to an aspect of the present invention, a spectral purity filter includes an aperture, the aperture being arranged to diffract a first wavelength of radiation and to allow at least a portion of a second wavelength of radiation to be transmitted through the aperture, the second wavelength of radiation being shorter than the first wavelength of radiation, wherein the aperture has a diameter greater than 20 &#x3bc;m.

Spectral purity filters for use in a lithographic apparatus

A zone plate includes a plurality of consecutively arranged, adjacent, and alternating first and second regions. The first regions are arranged to be substantially transparent to a first predetermined wavelength of radiation and a second predetermined wavelength of radiation that is different from the first predetermined wavelength of radiation. The second regions are arranged to be substantially opaque, diffractive, or reflective to the first predetermined wavelength of radiation and substantially transparent to the second predetermined wavelength of radiation.

Zone plate

A method of forming a spectral purity filter having a plurality of apertures configured to transmit extreme ultraviolet radiation and suppress transmission of a second type of radiation, in which trenches are formed in a base material in a pattern corresponding to the walls to be formed between the apertures. The trenches are filled with a grid material to form walls of the grid material, and the base material is selectively removed until the grid material is exposed and forms the spaces between the walls of the grid material for the apertures.

A radiation source includes an uncapped Mo/Si multilayer mirror, and a cleaning apparatus configured to remove a deposition comprising Sn on the uncapped Mo/Si multilayer mirror. The cleaning apparatus is configured to provide a gas comprising one or more of H, Dand HD and one or more additional compounds selected from hydrocarbon compounds and/or silane compounds in at least part of the radiation source, to produce hydrogen and/or deuterium radicals and radicals of the one or more additional compounds, from the gas, and to supply the hydrogen and/or deuterium radicals and radicals of the one or more additional compounds to the uncapped Mo/Si multilayer mirror to remove at least part of the deposition.

Radiation source with cleaning apparatus

A spectral purity filter is configured to reflect extreme ultraviolet radiation. The spectral purity filter includes a substrate, and an anti-reflective coating on a top surface of the substrate. The anti-reflective coating is configured to transmit infrared radiation. The filter also includes a multi-layer stack configured to reflect extreme ultraviolet radiation and to substantially transmit infrared radiation.

Spectral purity filter and lithographic apparatus

A lithographic apparatus includes a plasma source that includes a vessel configured to enclose a plasma formation site, an optical device configured to transfer optical radiation to or from the vessel, and a reflector arranged in an optical path between the optical device and the plasma formation site source. The reflector is configured to reflect the optical radiation between the optical device and the plasma formation site. The reflector is formed, in operation, as a molten metal mirror.

Lithographic apparatus, plasma source, and reflecting method

A radiation source is configured to generate radiation. The radiation source includes a first electrode and a second electrode configured to produce an electrical discharge during use to generate radiation-emitting plasma from a plasma fuel. The radiation source also includes a fuel supply configured to supply a plasma fuel to a fuel release area that is associated with the first electrode and the second electrode, and a fuel release configured to induce release of fuel, supplied by the fuel supply, from the fuel release area. The fuel release area is spaced-apart from the first electrode and from the second electrode.

Radiation source, lithographic apparatus and device manufacturing method

A method for removal of a deposition on an uncapped multilayer mirror of an apparatus. The method includes providing a gas that includes one or more of H, D, and DH, and one or more additional compounds selected from hydrocarbon compounds and/or silane compounds in at least part of the apparatus; producing hydrogen and/or deuterium radicals and radicals of the one or more additional compounds, from the gas; and bringing the uncapped multilayer mirror with deposition into contact with at least part of the hydrogen and/or deuterium radicals and the radicals of the one or more additional compounds to remove at least part of the deposition.

Method for removing a deposition on an uncapped multilayer mirror of a lithographic apparatus, lithographic apparatus and device manufacturing method

An optical element includes a first layer that includes a first material, and is configured to be substantially reflective for radiation of a first wavelength and substantially transparent for radiation of a second wavelength. The optical element includes a second layer that includes a second material, and is configured to be substantially absorptive or transparent for the radiation of the second wavelength. The optical element includes a third layer that includes a third material between the first layer and the second layer, and is substantially transparent for the radiation of the second wavelength and configured to reduce reflection of the radiation of the second wavelength from a top surface of the second layer facing the first layer. The first layer is located upstream in the optical path of incoming radiation with respect to the second layer in order to improve spectral purity of the radiation of the first wavelength.

Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby

Spectral purity of a radiation beam of a first wavelength may be improved by providing an optical element that includes a structure having at least first layer including a first material, which structure is configured to be substantially reflective for a radiation of the first wavelength and substantially transparent or absorptive for a radiation of a second wavelength, a second layer including a second material, the second layer being configured to be substantially reflective, absorptive or scattering for the radiation of the second wavelength, and vacuum between the first layer and the second layer, wherein the first layer is located upstream in the optical path of incoming radiation with respect to the second layer.

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Nijmegen, Netherlands

Wouter Anthon Soer