Samsung Electronics Co., Ltd.

Wooyong Jeon

Moorym Choi

Junyoung Choi

Jungtae Sung

Yoonjo Hwang

Sanghee Yoon

Disclosed are a semiconductor device and an electronic system including the same. The semiconductor device may include a peripheral circuit structure including peripheral circuits that are on a semiconductor substrate, and first bonding pads that are electrically connected to the peripheral circuits, and a cell array structure including a memory cell array including memory cells that are three-dimensionally arranged on a semiconductor layer, and second bonding pads that are electrically connected to the memory cell array and are coupled to the first bonding pads. The cell array structure may include a resistor pattern positioned at the same level as the semiconductor layer, a stack including insulating layers and electrodes that are vertically and alternately stacked on the semiconductor layer, and vertical structures penetrating the stack.

Semiconductor devices and electronic systems including the same

A nonvolatile memory device includes a first structure and a second structure bonded to the first structure. The second structure includes a low-resistance conductive layer, a common source line layer on the low-resistance conductive layer, a stack structure above the common source line layer, a plurality of channel structures passing through a cell region of the stack structure and contacting the common source line layer, a dummy channel structure passing through a step region of the stack structure and contacting the common source line layer, a second insulating structure on the stack structure, a plurality of second bonding pads on the second insulating structure, and a second interconnect structure in the second insulating structure.

Growing community of inventors

Anyang-si, South Korea

Wooyong Jeon