Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Nhn Business Platform Corporation

Woosung Lee

Woong Hee Lee

Phil Ouk Nam

JinGyun Kim

Dongchul Yoo

Junkyu Yang

Daehong Eom

Chunghyun Ryu

Junggeun Jee

Hyoungtaek Lim

Sanghoon Lee

Sangsoo Lee

Joonsuk Lee

Sunggil Kim

Hanmei Choi

Jeonggil Lee

Jihun Lee

Hauk Han

Shinjae Kang

Chaeho Kim

Jaewan Park

Kyong-Won An

Yongseok Cho

Inhwan Song

Hyunyong Go

Sanghue Hong

Minsung Koo

Minsoo Sohn

An electronic device is provided. The electronic device includes an antenna, a wireless communication module electrically connected to the antenna, a flexible printed circuit board (FPCB) including a first feeding element and a second feeding element which are electrically connected to the wireless communication module, a substrate disposed above the first feeding element and the second feeding element, a first conductive pattern including a first coupling hole and a second conductive pattern including a second coupling hole, which are formed on the upper surface of the substrate, a first coupling fastener configured to penetrate the first coupling hole and the first feeding element and electrically connect the first conductive pattern and the first feeding element, and a second coupling fastener configured to penetrate the second coupling hole and the second feeding element and electrically connect the second conductive pattern and the second feeding element.

Electronic device including antenna feeding unit

A memory system and storage device are provided, including: an auxiliary power device having at least one capacitor, wherein the at least one capacitor has a first path for leakage current; a charging circuit including a switch connected to the auxiliary power device; and a state determining circuit connected to the auxiliary power device, wherein the state determining circuit includes a path circuit connected in parallel with the at least one capacitor to form a second path having at least one of a resistance lower than a resistance of the first path or a current source.

Memory system storage device with power loss protection circuit

Disclosed is a three-dimensional semiconductor memory device including a carbon-containing layer on a substrate, a plurality of electrode interlayer dielectric layers and a plurality of electrode layers that are alternately stacked on the carbon-containing layer, a cell vertical pattern that penetrates at least some of the electrode interlayer dielectric layers and the electrode layers, and a semiconductor pattern between the cell vertical pattern and the carbon-containing layer. The substrate includes a plurality of first grains. The semiconductor pattern includes a plurality of second grains. An average size of the second grains is less than an average size of the first grains.

Three-dimensional semiconductor memory device

Semiconductor devices including a substrate including a cell array region and a through electrode region, an electrode stack on the substrate and including electrodes, vertical structures penetrating the electrode stack within the cell array region, vertical fence structures within an extension region and surrounding the through electrode region, and insulating layers being inside a perimeter defined by the vertical fence structures and being at the same level as the electrodes may be provided. The electrodes may include first protrusions protruding between the vertical fence structures in a plan view.

Semiconductor device having vertical fence structures

Memory system storage device including path circuit in parallel with auxiliary power device

A refrigerator may include an inner casing having a storage chamber defined therein; and a thermoelectric module including a thermoelectric element for cooling the storage chamber, a cooling sink in contact with one surface of thermoelectric element, and a heat sink contacting the other surface of thermoelectric element, wherein the heat sink includes: a heat dissipation fin including a stack of a plurality of fins; a heat dissipation plate coupled to the heat dissipation fin; a heat dissipation pipe for connecting the heat dissipation plate to the heat dissipation fin, wherein the heat dissipation pipe is arranged to pass through the heat dissipation fin.

Refrigerator

Various embodiments of the present disclosure provide a method of operating a non-volatile memory and an electronic device adapted to the method. When the possibility that power will be cut off in the electronic device is low or almost zero, the provision operation (e.g., an LSB backup) is interrupted which is capable of preventing data from being erased against a situation where the power is cut off. The method of managing a storage device includes: transferring an initialization command to a non-volatile memory functionally connected to a storage device; transferring a command for interrupting or executing an LSB backup to the storage device controller included in the non-volatile memory; and interrupting or executing, by the storage device controller, the LSB backup according to the LSB backup interrupt or execute command. Other modifications are provided.

Method for operating a non volatile memory of an electronic device and the electronic device implementing the same

A three-dimensional (3D) semiconductor memory device and a method for fabricating the same, the device including insulating layers stacked on a substrate; horizontal structures between the insulating layers, the horizontal structures including gate electrodes, respectively; vertical structures penetrating the insulating layers and the horizontal structures, the vertical structures including semiconductor pillars, respectively; and epitaxial patterns, each of the epitaxial patterns being between the substrate and each of the vertical structures, wherein a minimum width of the epitaxial pattern is less than a width of a corresponding one of the vertical structures.

Three-dimensional semiconductor memory device and method for fabricating the same

In a method of fabricating a semiconductor device, sacrificial layer patterns are formed by leaving portions of sacrificial layers, instead of completely removing the sacrificial layers. Thus, the reliability of the semiconductor device may be increased, and the process of manufacturing the same may be simplified.

Semiconductor device having sacrificial layer pattern with concave sidewalls and method fabricating the same

A semiconductor memory device is provided including a substrate, a plurality of interlayer insulating layers and gate electrodes alternately stacked on the substrate. The plurality of interlayer insulating layers and the gate electrodes define a channel hole that vertically penetrates the plurality of interlayer insulating layers and the gate electrodes to expose at least a portion of the substrate. A channel recess is provided in the substrate exposed by the channel hole. An epitaxial pattern fills the channel recess. The epitaxial pattern has an upper surface that is concave and curves inward in a middle portion thereof.

Semiconductor memory devices having increased distance between gate electrodes and epitaxial patterns and methods of fabricating the same

Methods of manufacturing a semiconductor device are provided. Patterns having a recess region defined therebetween are formed on a substrate, and then a silicon precursor having an organic ligand is provided on the substrate to absorb silicon on sidewalls and a bottom surface of the recess region to form a silicon monolayer on the patterns having the recess region defined therebetween. A silicon layer without void and cutting is formed on the silicon monolayer.

Method of manufacturing a semiconductor device which includes forming a silicon layer without void and cutting on a silicon monolayer

A method and system for creating a search result list, which can simplify a system configuration by searching a single database for search information, and also can display search information on a plurality of display areas with only one keyword purchase. According to the present invention, there may be provided a method and system for creating a search result list, which can differ from a conventional method and system of providing an individual database for each of display areas and thereby effectively managing search information, and can enroll a keyword in a single database according to one keyword purchase and thereby display search information on a plurality of display areas.

Growing community of inventors

Yongin-si, South Korea

Woosung Lee