Asm IP Holding B.v.

WooSik Shin

Hyunchul Kim

SeungWoo Choi

YeaHyun Gu

KiHun Kim

A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.

Growing community of inventors

Hwaseong-si, South Korea

WooSik Shin