Lg Innotek Co., Ltd.

WooSik Lim

SungHo Choo

SungKyoon Kim

MinGyu Na

HeeYoung Beom

MyeongSoo Kim

Hyunseoung Ju

JuneO Song

Yonggyeong Lee

Jaewon Seo

A light-emitting device may include a light-emitting structure, a first electrode formed on the first conductive semiconductor layer, and a second electrode formed on the second conductive semiconductor layer. The first electrode may include a first pad, and a first branch coupled to the first pad and extending in a longitudinal direction. The second electrode may include a second pad, and a third branch and a fourth branch that are connected to the second pad and extend from the second pad.

Light-emitting device and lighting apparatus

A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first semiconductor layer doped with a first dopant while including a first region and a second region stepped relative to the first region, a second semiconductor layer doped with a second dopant different from the first dopant while disposed over the second region, and an active layer disposed between the first and second semiconductor layers, a first electrode disposed on the first region, and a functional member disposed between one side surface of the light emitting structure adjacent to the first electrode and the first electrode while being disposed at the first region, wherein the functional member has a thickness greater than a thickness of the first electrode and less than a thickness of the light emitting structure, with respect to a surface of the first region.

Light emitting device

Disclosed is a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed on between the first and second semiconductor layers, a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer. The first semiconductor layer is formed, at an edge portion thereof, with a hole, in which a portion of the first electrode is arranged.

Disclosed is a light emitting device including a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, a first electrode layer electrically connected to the first conductive-type semiconductor layer, and a second electrode layer disposed on the second conductive-type semiconductor layer, wherein the second electrode layer includes a plurality of adhesive seeds spaced from one another on the light emitting structure, a reflective layer disposed on the plurality of adhesive seeds, and a protective layer disposed on the reflective layer, wherein the reflective layer contains silver (Ag) or an Ag alloy. As a result, it is possible to improve light reflectance and electrical properties of the electrode layer of the light emitting device and reliability of the electrode layer.

Light emitting device with electrode having plurality of adhesive seeds spaced from one another on the light emitting structure

A light-emitting device includes a substrate, a light-emitting structure on the substrate, the light-emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer, a light-transmitting electrode layer on the second semiconductor layer, and a first reflective layer on the light-transmitting electrode layer, wherein the first reflective layer includes a first layer having a first index of refraction and a second layer having a second index of refraction different from the first index of refraction. Based on this configuration, it is possible to protect the light-emitting device and improve luminous efficiency thereof.

Growing community of inventors

Seoul, South Korea

WooSik Lim