Samsung Electronics Co., Ltd.

Wooseok Park

Seungmin Song

Sungil Park

Junggun You

Sangsu Kim

Sung Gi Hur

Kangmook Lim

Daekwon Joo

A semiconductor device including a substrate that includes first and second regions; a first active pattern on the first region, the first active pattern including first source/drain patterns and a first channel pattern between the first source/drain patterns; a second active pattern on the second region, the second active pattern including second source/drain patterns and a second channel pattern between the second source/drain patterns; and a first gate electrode on the first channel pattern and a second gate electrode on the second channel pattern, wherein a length of the first channel pattern is greater than a length of the second channel pattern, each of the first channel pattern and the second channel pattern includes a plurality of semiconductor patterns stacked on the substrate, and at least two semiconductor patterns of the first channel pattern are bent away from or toward a bottom surface of the substrate.

Semiconductor device

A semiconductor device is provided including an active region on a substrate A plurality of channel layers is spaced apart on the active region. Gate structures are provided. The gate structures intersect the active region and the plurality of channel layers. The gate structures surround the plurality of channel layers. Source/drain regions are disposed on the active region on at least one side of the gate structures. The source/drain regions contact with the plurality of channel layers. A lower insulating layer is disposed between side surfaces of the gate structures on the source/drain regions. Contact plugs penetrate through the lower insulating layer. The contact plugs contact the source/drain regions. An isolation structure intersects the active region on the substrate and is disposed between the source/drain regions adjacent to each other. Each of the gate structures includes a gate electrode and a gate capping layer including materials different from each other.

Semiconductor devices including a gate isolation structure and a gate capping layer including different materials from each other

Growing community of inventors

Ansan-si, South Korea

Wooseok Park