Samsung Electronics Co., Ltd.

Woonjae Chung

Jun-Ho Jang

Min-Woo Kim

Jin-Hwa Lee

Wan-Soo Choi

Dong-Young Seo

Bumhee Lee

Hungjun An

HanShin Shin

Yonghwan Song

A storage device includes one or more nonvolatile memories and a memory controller. The memory controller controls operations of the nonvolatile memories. The memory controller controls the nonvolatile memories differently based on a data amount of write data stored in the nonvolatile memories and/or read data output from the nonvolatile memories according to the operations of the nonvolatile memories during each of a plurality of power supply intervals between a point in time where power is supplied and a point in time where the supplied power is interrupted.

Storage device managing nonvolatile memory differently depending on tendency of interruption of power supply

In a method for operating a NAND flash memory system, a temperature sensing device detects a decrease in temperature of the NAND flash memory system below a first threshold temperature level, and a clock control unit adjusts an operating condition for a memory access operation in response to detecting the decrease in the temperature below the first threshold temperature level.

Storage devices, memory systems and operating methods to suppress operating errors due to variations in environmental conditions

A user device includes a storage device including a flash memory; and a host connected to the storage device via an interface and adapted to transmit data to the storage device. The host provides the storage device with erase count information of the flash memory using a host flash translation layer (FTL), provides the storage device with reprogram information when the flash memory uses a reprogram method, or provides the storage device with page offset information of an open block of the flash memory.

User device having a host flash translation layer (FTL), a method for transferring an erase count thereof, a method for transferring reprogram information thereof, and a method for transferring a page offset of an open block thereof

Disclosed is a method for accessing a non-volatile memory device using a flash translation layer. The method includes receiving a write request for data from a file system and recording the data in the non-volatile memory device in response to the write request. The flash translation layer is informed whether a confirm mark for the data is recorded or not from the file system.

Non-volatile memory system and access method thereof utilizing a confirm mark when data has been successfully recorded therein

A system code is stored in a first nonvolatile memory. The first nonvolatile memory and a second nonvolatile memory are heated during assembly of an electronic device including the first nonvolatile memory and a second nonvolatile memory. The heating is to a temperature sufficient to change a state of at least some memory cells in the second nonvolatile memory device. After the heating, the system code stored in the first nonvolatile memory is copied into the second nonvolatile memory. The first nonvolatile memory may he less vulnerable to temperature-related data alteration than the second nonvolatile memory. For example, the first nonvolatile memory may include a NAND flash memory and the second nonvolatile memory may include a variable resistance memory.

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Gunpo-si, South Korea

Woonjae Chung