Samsung Electronics Co., Ltd.

Woong-lin Hwang

Hyung Ki Choi

Yong-sung Kim

Jun-young Kim

Jae-ho You

Seok-Whan Chung

Jin-hwan Kim

Eung-Yeoul Yoon

Jong-kuk Mun

Dong-hoon Chang

Jao-ho You

A slim optical pickup in which a leaf spring is combined with an upper surface of a semiconductor substrate, which is a silicon optical bench (SiOB) monolithically manufactured with a photodetector. The slim optical pickup has a substrate including a light source for generating a light beam, an optical element to irradiate light to an optical disc, a photodetector for receiving a light beam reflected by the optical disc, and a plurality of first bonding pads; a heat sink attached to the surface of the substrate; and a supporting means having a plurality of second bonding pads formed on an inner side of an array of the plurality of the first bonding pads on the substrate.

Slim optical pickup

A micro optical bench structure and a method of manufacturing a micro optical bench structure are provided. The micro optical bench structure includes: a lower substrate; an upper substrate which is bonded to the lower substrate, and has a through-hole for exposing the lower substrate; and a first optical device which is installed at the lower substrate, and units relating to the first optical device.

Micro optical bench structure

An optical bench is provided, as are a thin optical pickup that employs the optical bench, and a method of manufacturing the optical bench. The optical bench includes a light source for generating light for recording and reproducing information to and from an optical disc, a light source stand on which the light source is mounted, a mirror adjacent to the light source stand, and a bottom surface at a lower point than the light source stand and between the light source stand and the mirror surface. Sides of the light source stand besides the side facing the mirror are connected to the surface of the substrate by a flat sloped surface. Along the sloped surface, two electrodes for supplying power to the light source are connected to the light source stand. Since the metal wirings are formed along the sloped surface without trenches or windings between the light source stand and the silicon substrate, no disconnection of metal lines at a corner occurs.

Optical bench, slim optical pickup employing the same and method of manufacturing the optical bench

A photodetector device includes a doped semiconductor substrate. A first intrinsic semiconductor material layer, a main reflector, a second intrinsic semiconductor material layer, an upper semiconductor material layer, which is doped the opposite as the substrate, are formed in succession on the semiconductor substrate. An upper electrode is formed on and electrically connected with the upper semiconductor layer, and a lower electrode is electrically connected to the semiconductor substrate. One of the intrinsic semiconductor layers is relatively thin to absorb incident light, while the other is relatively thick. The photodetector device, a p-i-n photodetector, has an I region including the intrinsic semiconductor layers with different thicknesses, and a main reflector therebetween. The thickness of the entire I region can be increased with a reduced transit distance for holes. Thus, low driving voltage and high sensitivity to a high frequency optical signal requirements can be realized without reducing the size of the photo-receiving area.

Photodetector device and method for manufacturing the same

A photodetector device and a process for manufacturing the same are described. The photodetector device comprises a doped semiconductor substrate; an intrinsic semiconductor material layer formed over the substrate, for absorbing incident light; an upper semiconductor material layer doped with the opposite type to the substrate, formed on a portion of the intrinsic semiconductor material layer to allow at least a portion of the incident light to directly enter the intrinsic semiconductor material layer; an upper electrode formed in a predetermined pattern on the upper semiconductor material layer, the upper electrode electrically connected to the upper semiconductor material layer; and a lower electrode electrically connected to the substrate, wherein a portion of the intrinsic semiconductor material layer constitutes at least a part of a photo-receiving surface. The photodetector device has a photo-receiving surface, which is formed by removing all or a portion of the upper semiconductor material layer within a photo-receiving area, which allows at least a portion of the incident light to directly enter the intrinsic semiconductor material layer, thereby reducing capacitance even with a relatively large photo-receiving surface.

A bidirectional signal transmission device using light which adopts a photodiode-incorporated vertical cavity surface emitting laser (VCSEL) as light devices so that signal transmission and reception between facing light devices is achieved via the same channel, is provided. This bidirectional signal transmission device includes first and second light devices having a VCSEL part and a photodiode part incorporated with the VCSEL part, at least one optical fiber installed between the first and second light devices, and diffraction elements installed between the first light device and the input/output port of the optical fiber and between the second light device and the output port of the optical fiber, respectively, for selectively diffracting incident light so that light output from the optical fiber is received by the photodiode part, so that a received light signal having a high S/N ratio can be detected.

Growing community of inventors

Gunpo-si, South Korea

Woong-lin Hwang