Samsung Electronics Co., Ltd.

Gwangju Institute of Science and Technology

Woong-ki Hong

Joon-seop Kwak

June-o Song

Tae-yeon Seong

Cheol Kyu Kim

Do-hyoung Kim

Mirco Cantoro

Yong-Joon Choi

Tae-yong Kwon

Seung-mo Ha

Dong-hoon Khang

Seung-Jin Mun

Chang-Jae Yang

So-ra You

Woo-Ram Kim

Seong-Ju Kim

A semiconductor device includes a compound semiconductor layer, where the compound semiconductor layer includes separate fin patterns in separate regions. The separate fin patterns may include different materials. The separate fin patterns may include different dimensions, including one or more of width and height of one or more portions of the fin patterns. The separate fin patterns may include an upper pattern and a lower pattern. The upper pattern and the lower pattern may include different materials. The upper pattern and the lower pattern may include different dimensions. Separate regions may include separate ones of an NMOS or a PMOS. The semiconductor device may include gate electrodes on the compound semiconductor layer. Separate gate electrodes may intersect the separate fin patterns.

Semiconductor device

Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

Top-emitting nitride-based light emitting device and method of manufacturing the same

Growing community of inventors

Gwangju-si, South Korea

Woong-ki Hong