Samsung Electronics Co., Ltd.

WookHyun Kwon

Byounghak Hong

Hyoeun Park

Kang-Ill Seo

Gunho Jo

Sooyoung Park

Kangill Seo

Integrated circuit devices including a bipolar junction transistor (BJT) and/or a P-N junction diode are provided. The integrated circuit devices may include a first stack including first and second semiconductor regions that are spaced apart from each other in a horizontal direction and have a first conductivity type and a plurality of nano-semiconductor layers that are stacked in a vertical direction and are between the first and second semiconductor regions. The plurality of nano-semiconductor layers each have a second conductivity type, and the first semiconductor region may include a side surface facing the plurality of nano-semiconductor layers. The integrated circuit device may also include a vertical semiconductor layer having the second conductivity type and a conductive contact that contacts the plurality of nano-semiconductor layers. The vertical semiconductor layer may contact the side surface of the first semiconductor region and the plurality of nano-semiconductor layers.

Bipolar junction transistors and P-N junction diodes including stacked nano-semiconductor layers

Integrated circuit devices may include a cell transistor and a parameter measuring structure (e.g., a resistance measuring structure). The cell transistor may be on a first surface of a substrate structure, which is opposite a second surface thereof. The parameter measuring structure may include first and second contact structures that extend through the substrate structure. The second surface of the substrate structure may expose respective portions of the first and second contact structures.

Integrated circuit devices including a parameter measuring structure and methods of forming the same

Growing community of inventors

Hwaseong-si, South Korea

WookHyun Kwon