Samsung Electronics Co., Ltd.

Wookhyoung Lee

Hansoo Kim

Sunil Shim

Jaehoon Jang

Kihyun Hwang

Wonseok Cho

Woonkyung Lee

Jaeyoung Ahn

Juyul Lee

Jongsik Chun

Seongjun Seo

Kang-Sup Roh

Youngmo Ku

Yongin Cho

Disclosed is a semiconductor device comprising a substrate including a cell array region and a connection region, an electrode structure extending in a first direction on the substrate and including vertically stacked electrodes having pad sections arranged stepwise on the connection region, a first contact plug connected to a first one of the pad sections, a pair of first vertical structures that penetrate the first one of the pad sections and are spaced apart from each other in a first direction by a first distance, a second contact plug connected to a second one of the pad section and having a vertical length that is greater than that of the first contact plug, and a pair of second vertical structures that penetrate the second one of the pad sections and are spaced apart from each other in the first direction by a second distance that is greater than the first distance.

Semiconductor device and electronic system including the same

Provided is a semiconductor device including gate structures provided on a substrate, a separation insulating layer interposed between the gate structures, and a plurality of cell pillars connected to the substrate through each gate structure. Each gate structure may include horizontal electrodes vertically stacked on the substrate, and an interval between adjacent ones of the cell pillars is non-uniform.

Semiconductor device having staggered pillars

Semiconductor device

Growing community of inventors

Seongnam-si, South Korea

Wookhyoung Lee