Samsung Electronics Co., Ltd.

Lg Electronics Inc.

International Business Machines Corporation

Hewlett-packard Development Company, L.p.

Lg Display Co., Ltd.

Woojin Kim

Sechung Oh

Jangeun Lee

Junho Jeong

Woo Chang Lim

Kyungtae Nam

Youngmin Lee

Jieun Choi

Gwanhyeob Koh

Joonmyoung Lee

Sukhun Choi

Hyoseok Na

Dongil Yang

Jaewoo Jeong

Yong Jong Park

Jongchul Park

Hyunjung Kim

Jeahyoung Lee

Heeju Shin

Junghoon Bak

Junghwan Moon

Dae Kyom Kim

Mahesh Govind Samant

Hyungho Park

Stuart S P Parkin

Hojung Kim

Kilho Lee

Ki Woong Kim

Yanghwa Lee

Keewon Kim

Kiseok Suh

Shinhee Han

Jinbaek Kim

Sungchul Ahn

Kwangil Shin

Kihyug Seong

Woochang Lim

KyungTae Nam

Seongho Jeong

Byeongno Jeong

Minkyoung Joo

Seowon Lee

Jangeum Lee

Younghyun Kim

Seungeun Lee

Ji-won Moon

Sang Hwan Park

Jaeseung Choi

Whankyun Kim

HyunJung Kim

Chanjin Park

Hyeongsun Hong

Hayoung Kim

Seung-gweon Lee

Jongsun Jeon

Jihoon Choi

Woong-Yong Choi

Sangyong Kim

Junhong Park

Junghwan Son

Seung Pil Ko

Hyungjoon Kwon

Jinhwa Hong

Eungryeol Seo

Sungpil Kim

Soonoh Park

Jang Eun Lee

Yongnam Ahn

Yunjae Lee

Jeong Heon Park

Hyunchul Shin

Yongil Moon

Geonung Lee

Kyuheon Lee

Yong-kwan Cho

Taihoon Kim

Youngsoo Choi

Jongki Ahn

Daesung Park

Guangri Jin

Nayoung Ji

Byeungwoong Han

S P Stuart Parkin

A clothes treating apparatus includes: a cabinet; a tub; a drum; a base forming an air flow path including an air inlet and an air outlet; a heat exchanger; a supply duct forming a first supply flow and a second supply flow path; a discharge duct forming a first discharge flow path and a second discharge flow path; a first damper configured to be movable to a first position of opening the first supply flow path and closing the second supply flow path or a second position of closing the first supply flow path and opening the second supply flow path; and a second damper configured to be movable to a third position of opening the first discharge flow path and closing the second discharge flow path or a fourth position of closing the first discharge flow path and opening the second discharge flow path.

Clothes treating apparatus

According to an embodiment, an electronic device includes: a flexible display, at least one sensor, and a processor; wherein the processor is configured to: control the display to display an object at least partially superimposed on a first user interface displayed on the first display area and the second display area, on a portion of an edge of the first display area; identify that the state of the electronic device is changed from a second state to a first state, while the object is displayed on the portion of the edge of the first display area; display the object the portion of the edge of the second display area extending from the edge of the first display area, in response to identifying that the state of the electronic device is changed from the second state to the first state.

Electronic device and method for displaying screen through flexible display

The present disclosure relates to a clothes care apparatus. The clothes care apparatus includes a main body including a clothes care compartment, a machine compartment, a steam generator provided in the machine compartment configured to generate steam, a steam injector including a steam injection nozzle configured to receive the steam from the steam generator and inject the steam into the clothes care compartment, at least one air injection hole configured to allow air to be injected into the clothes care compartment in order to change a direction of the steam injected from the steam injector, a regulation device configured to regulate a flow rate or a wind direction of the air injected from the at least one air injection hole, and a controller configured to control the regulation device and change the direction of the steam by regulating the air injected from the at least one air injection hole.

Clothes care apparatus

Disclosed is an electronic device including a plurality of antennas, a plurality of radio frequency circuits, a first transceiver, a second transceiver, a switching circuit configured to connect the plurality of radio frequency circuits to the first transceiver or the second transceiver, a processor, and a memory. The electronic device may be configured to switch a receiving path by connecting at least one of a plurality of receiving paths to another transceiver based on reception performance of the plurality of receiving paths.

Method of switching receiving path and electronic device therefor

A transmission of a sounding reference signal by an electronic device is provided. A method of an electronic device includes transmitting a signal via a first antenna subset including at least one of a plurality of antennas, measuring an emission environment of the plurality of antennas, using the signal, determining at least one antenna to be used for transmitting a sounding reference signal (SRS), based on the emission environment, and transmitting the SRS via the at least one determined antenna. The emission environment includes a strength of a reflected signal that corresponds to the signal and is reflected by the first antenna subset, or a strength of a reception signal that corresponds to the signal and is received by a second antenna subset including at least one remaining antenna.

Method of transmitting sounding reference signal and electronic device therefor

A variable resistance memory device includes a first conductive line, a bipolar selection device on the first conductive line and electrically connected to the first conductive line, a second conductive line on the first conductive line and electrically connected to the bipolar selection device, a variable resistance layer on the second conductive line and electrically connected to the second conductive line, and a third conductive line on the variable resistance layer and electrically connected to the variable resistance layer.

Variable resistance memory device

An embedded device includes a first insulation layer, a second insulation layer on the first insulation layer, a lower electrode contact in the first insulation layer in a first region, a first structure, having a lower electrode, a magnetic tunnel junction, and an upper electrode, in the second insulation layer and contacting the lower electrode contact, a first metal wiring structure through the first and second insulation layers in a second region, a third insulation layer on the second insulation layer, a bit line structure through the third insulation layer and the second insulation layer in the first region, the bit line structure having a first height and contacting the upper electrode, and a second metal wiring structure through the third insulation layer in the second region, the second metal wiring structure contacting the first metal wiring structure, and having a second height lower than the first height.

Embedded device and method of manufacturing the same

According to one or more embodiments of the disclosure, an electronic device may include a power amplifier, a voltage generator, an antenna, and a communication processor. The CP determines whether an output waveform of the transmission signal which is output through the antenna is a first waveform or a second waveform. If the output waveform is the first waveform, the voltage generator generates a first output voltage for amplifying the first waveform by applying a first direct current (DC) power source of one or more first voltages. If the output waveform is the second waveform, the voltage generator generates a second output voltage for amplifying the second waveform by applying a second DC power source of a second voltage shifted by a designated level with respect to the first voltage, based on a peak power of the first waveform and a peak power of the second waveform.

Method of adjusting applied voltage for transmission signal amplification and electronic device thereof

Magnetic memory devices may include a substrate, a metal pattern extending in a first direction on the substrate, a magnetic tunnel junction pattern on the metal pattern, and an anti-oxidation layer between the metal pattern and the magnetic tunnel junction pattern. The magnetic tunnel junction pattern may include a first magnetic pattern, a tunnel barrier pattern, and a second magnetic pattern.

Magnetic memory devices for reducing electrical shorts between magnetic tunnel junction patterns

An example toner refill cartridge includes a body to accommodate toner, a plunger inserted into the body and movably coupled to the body in a longitudinal direction of the body, and capable of pushing the toner out of the body, a toner injection amount detector to detect each of a plurality of movement positions of the plunger in accordance with the movement of the plunger, and a connection interface to connect to an image forming apparatus to transmit a signal corresponding to each of the detected movement position to the image forming apparatus.

Detecting toner injection amount of toner refill cartridge

Disclosed is an electronic device that is configured to determine whether a phase locked loop (PLL) circuit is operating normally, thereby preventing component damage in the electronic device and preventing disconnection from a communication network.

Electronic device including phase locked loop circuit used for radio frequency communication

A magnetic memory device includes a device isolation layer on a substrate and defining an active region, a source region and a drain region apart from each other in the active region of the substrate, a channel portion in the active region of the substrate and between the source region and the drain region, a spin orbit torque (SOT)-inducing layer on the channel portion of the substrate, a magnetic tunnel junction (MTJ) structure on the SOT-inducing layer, the MTJ structure including a free layer on the SOT-inducing layer, a tunnel barrier layer on the free layer, and a pinned layer on the tunnel barrier, a word line on the MTJ structure, a source line electrically connected to the source region, and a bit line electrically connected to the drain region.

Magnetic memory device

Development cartridge for a printer

A method of fabricating a semiconductor device includes forming a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a tunnel barrier layer interposed between the first and second magnetic layers, patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern, forming an insulating layer to cover the magnetic tunnel junction pattern, and performing a thermal treatment process to crystallize at least a portion of the first and second magnetic layers. The thermal treatment process may include performing a first thermal treatment process at a first temperature, after the forming of the magnetic tunnel junction layer, and performing a second thermal treatment process at a second temperature, which is higher than or equal to the first temperature, after the forming of the insulating layer.

Method of fabricating semiconductor device

Growing community of inventors

Yongin-si, South Korea

Woojin Kim