Samsung Electronics Co., Ltd.

Dongguk University Industry-academic Cooperation Foundation

Wooil Kim

Manhwee Jo

Jaehyun Kim

Taehun Kim

Youngseok Kim

Joungyeal Kim

Junghwan Oh

Sunwook Kim

Seongheon Yu

Seongmin Jo

Junhee Yoo

Hyunjin Ko

Chulung Kim

Jingyu Ahn

Hyeonsoo Sim

Chunghwan You

Taewoo Han

A system on chip (SoC) and an application processor are provided. The SoC includes a memory controller configured to control a memory; a plurality of function modules configured to access the memory through a memory interface; a system interconnect circuit configured to operate based on a first clock signal and connect the memory interface and the plurality of function modules; and a power controller configured to control the first clock signal to be periodically gated, and control the memory to operate in a lower-power mode during a period in which the first clock signal is gated.

System on chip and application processor

A memory system includes a memory device including a memory cell array divided into a plurality of memory banks, and a memory controller that sends read requests or write requests to the memory device for the purpose of inputting data to or outputting data from the memory banks of the memory cell array, respectively, and sends the read requests so as to be separated from the write requests based on a read-write switching point. In a first turn, the memory controller sets a near switching point before the read-write switching point. The memory controller blocks scheduling at least one of first bank requests, between the near switching point and the read-write switching point. The memory controller schedules at least one of second bank requests, which cause state switching of the memory banks, so as to be issued between the near switching point and the read-write switching point.

Memory system including memory device and memory controller, and operating method thereof

Disclosed is an integrated circuit, which counts parameters required for a dynamic voltage frequency scaling (DVFS) operation. The integrated circuit includes: an event block accessing a bus, which connects processing devices to each other, and outputting an event signal, based on data transmitted through the bus; a clock counter counting the number of clock signals received from a clock management unit; a plurality of performance counters respectively counting parameters used to calculate a workload, based on the event signal; an interface receiving an operation signal from the DVFS governor, which determines an operation frequency and an operation voltage of a processing device based on the workload, and transmitting the number of clock signals and the parameters to the DVFS governor; and a controller controlling operations of the event block, the clock counter, and the plurality of performance counters, based on the operation signal.

Integrated circuit, dynamic voltage and frequency scaling (DVFS) governor, and computing system including the same

An operating method of a system-on-chip includes outputting a prefetch command in response to an update of mapping information on a first read target address, the update occurring in a first translation lookaside buffer storing first mapping information of a second address with respect to a first address, and storing, in response to the prefetch command, in a second translation lookaside buffer, second mapping information of a third address with respect to at least some second addresses of an address block including a second read target address.

System-on-chip performing address translation and operating method thereof

In a method of controlling on-die termination (ODT) in a memory system including a plurality of memory units that shares a data bus to transfer data, ODT circuits of the plurality of memory units are enabled into an initial state, a resistance value of the ODT circuit is set to a first resistance value, of at least one write non-target memory unit among the plurality of memory units during a write operation on a write target memory unit among the plurality of memory units, and a resistance value of the ODT circuit is set to a second resistance value, of at least one read non-target memory unit among the plurality of memory units during a read operation on a read target memory unit among the plurality of memory units.

Method of controlling on-die termination and memory system performing the same

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Yongin-si, South Korea

Wooil Kim