Pixart Imaging Incorporated

Pixart Imaging Incorporation

Pixart Imaging (penang) Sdn. Bhd.

Wooi-Kip Lim

Shan-Chong Tan

Han-Chi Liu

Swee-Lin Thor

An imaging circuit includes plural pixel circuits which are arranged in a pixel array. Each of the plural pixel circuits includes an image sensing device which is configured to sense a normal imaging light shedding on the imaging circuit with a predetermined frame rate. At least a portion of the plural pixel circuits are first type pixel circuits. Each of the first type pixel circuit further includes a flicker sensing device. Plural flicker sensing devices in the pixel array are coupled in parallel to sense a flickering light shedding on the imaging circuit to generate a flicker indicating signal.

Imaging circuit capable of sensing flickering light

An image sensor uses a pixel circuit which includes a BJT phototransistor having multiple selectable beta values. The BJT is one semiconductor device includes: a substrate having a first conductivity type; a first well having the first conductivity type; a collector electrode having the first conductivity type in the first well; a second well having a first concentration of a second conductivity type; a first emitter electrode having the first conductivity type in the second well; a base electrode having the second conductivity type in the second well; a third well having a second concentration of the second conductivity type, wherein the second concentration is different from the first concentration; and a second emitter electrode having the first conductivity type in the third well.

Multi-beta pixel circuit and image sensor circuit using same

An image sensor includes a transistor, at least one storage capacitor and a voltage provider. The at least one storage capacitor is connected to the transistor. The voltage provider is electrically connected to the transistor and configured to provide an extra voltage for the at least one storage capacitor. The extra voltage is variable in response to images with different brightness. The image sensor includes the voltage provider to provide extra voltage to increase the charging capacity of the storage capacitor. The Signal-Noise-Ratio of the image sensor won't be affected and the fill factor is able to be maintained at a certain level.

Image sensor and method for increasing signal-noise-ratio thereof

An image sensor for capturing an image, includes: an array of pixel circuits, wherein each of the pixel circuits is for sensing a portion of the image, and generate a sample signal and a hold signal according to the portion of the image and a predetermined reset voltage respectively; and a transfer circuit, which is coupled to the array, and is for converting the sample signals and hold signals to corresponding digital sensing signals and corresponding digital reset signals respectively, to generate pixel signals respectively corresponding to the pixel circuits according to the digital sensing signals and the digital reset signals; wherein the transfer circuit converts the sample signal generated by one of the pixel circuits to the corresponding digital sensing signal and converts the hold signal generated by another one of the pixel circuits to the corresponding digital reset signal at least partially within a same period.

Image sensor and transfer circuit and transfer method thereof

A signal processing circuit of a touch device including an operational amplifier, a feedback resistor and a step current circuit is provided. The feedback resistor connects between a negative input and an output terminal of the operational amplifier. The step current circuit is coupled to the negative input of the operational amplifier and configured to provide or draw a step current to reduce the current flowing through the feedback resistor so as to compensate the voltage offset of the operational amplifier.

Touch device and signal processing circuit as well as operating method thereof

A device, for pixel transfer rate boosting, is provided and includes an image sensing array having a plurality of pixel units, in which each of the plurality of pixel units is configured to generate a pixel signal when receiving an electromagnetic energy, a signal buffer circuit, electrically coupled with the image sensing array to receive the pixel signals, a switch circuit electrically coupled with the signal buffer circuit, a capacitor having a first terminal and a second terminal, in which the first terminal electrically couples with the switch circuit and the second terminal connects to a ground, a comparator, electrically coupled with the switch circuit, and a pull-down unit, electrically coupled with the first terminal of the capacitor and the switch circuit. After the switch circuit is turned on, the pull-down unit pulls the plurality of pixel output signals down.

Pixel transfer rate boosting device

The present disclosure illustrates a pre-flash time adjusting circuit. The pre-flash time adjusting circuit comprises a first pre-flash time adjusting unit coupled to an image sensing array. The image sensing array comprises a plurality of pixel units. The first pre-flash time adjusting unit comprises a switching module and a storage capacitor. When the image sensing array senses a light beam, the switching module selectively connects a first switch and the storage capacitor, such that the storage capacitor starts to charge the first pixel units of the first pixel group, until base-emitter voltages of a plurality of bipolar junction transistors disposed in the first pixel units reaches a stable state.

Pre-flash time adjusting circuit and image sensor using the same

An image pixel includes light nodes and a dark node. The dark node includes: a first charge storage unit for storing first power supply information during a first time period; a second charge storage unit for storing second power supply information related to the power supply during a second time period; and an information output unit for outputting a first sample signal related to the first power supply information or a second sample signal related to the second power supply information. The first power supply information remains in the first charge storage unit during the second time period and during when the second sample signal is outputted by the information output unit.

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Penang, Malaysia

Wooi-Kip Lim