Samsung Electronics Co., Ltd.

Woohyun Lee

Sang-Kuk Kim

Jongchul Park

Jong-Kyu Kim

Jongsoon Park

Yil-hyung Lee

Hyeji Yoon

Inho Kim

Oik Kwon

Yeonji Kim

Kwangyoung Oh

An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time.

Ion beam apparatus with continuously changing parameter control

An etching target layer is formed on a substrate. An upper mask layer is formed on the etching target layer. A plurality of preliminary mask patterns is formed on the upper mask layer. The plurality of preliminary mask patterns is arranged at a first pitch. Two neighboring preliminary mask patterns of the plurality of preliminary mask patterns define a preliminary opening. An ion beam etching process is performed on the upper mask layer using the plurality of preliminary mask patterns as an etch mask to form a first preliminary-interim-mask pattern and a pair of second preliminary-interim-mask patterns. The first preliminary-interim-mask pattern is formed between one of the pair of second preliminary-interim-mask patterns and the other of the pair of second preliminary-interim-mask patterns.

Methods of fabricating semiconductor device

A magnetic memory device includes a lower interlayer insulating layer on a substrate, and a plurality of magnetic tunnel junction patterns on the lower interlayer insulating layer and isolated from direct contact with each other in a direction extending parallel to a top surface of the substrate. The lower interlayer insulating layer includes an upper surface including a recessed surface and a top surface, the recessed surface at least partially defining an inner sidewall and a bottom surface of a recess region between adjacent magnetic tunnel junction patterns, such that the recessed surface at least partially defines the recess region. The inner sidewall is inclined at an acute angle with respect to the top surface of the substrate, and the bottom surface has a shape that is convex toward the top surface of the substrate, in direction extending perpendicular to the top surface of the substrate.

Magnetic memory devices

A semiconductor device includes a first lower insulating interlayer, a protection insulating layer, and a first upper insulating interlayer that are sequentially stacked on a substrate, and a conductive pattern penetrating the first upper insulating interlayer, the protection insulating layer; and the first lower insulating interlayer. The conductive pattern includes a line part extending in a direction parallel to an upper surface of the substrate and contact parts extending from the line part toward the substrate. The contact parts are separated from each other with an insulating pattern therebetween. The insulating pattern includes a portion of each of the first upper insulating interlayer, the protection insulating layer, and the first lower insulating interlayer. At least a portion of the insulating pattern has a stepped profile.

Semiconductor devices

Ion beam apparatuses and methods for forming patterns using the same, and methods for manufacturing magnetic memory devices using the same

Data storage devices are provided. A data storage device includes a dielectric layer on a substrate. The data storage device includes a plurality of data storage structures on the dielectric layer. The data storage device includes a conductive material on the dielectric layer. Moreover, the data storage device includes an insulation layer on the conductive material.

Growing community of inventors

Hwaseong-si, South Korea

Woohyun Lee