Samsung Electronics Co., Ltd.

Woogwan Shim

Jongchul Park

Ji-Young Min

Heedon Hwang

Insang Jeon

Inseak Hwang

Mongsup Lee

Yoonho Son

Chan Min Lee

A semiconductor device may include a substrate including an active pattern delimited by a device isolation pattern, a gate electrode crossing the active pattern, a first impurity region and a second impurity region in the active pattern on both sides of the gate electrode, a bit line crossing the gate electrode, a first contact electrically connecting the first impurity region with the bit line, and a first nitride pattern on a lower side surface of the first contact. A width of the first contact measured perpendicular to an extending direction of the bit line may be substantially equal to that of the bit line.

Semiconductor device and method of fabricating the same

Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and the opposing sidewalls of the trench. The liner electrode may include a sidewall portion between a sidewall of the bulk electrode and one of the opposing sidewalls of the trench.

Semiconductor devices and methods of forming the same

Growing community of inventors

Yongin-si, South Korea

Woogwan Shim