Samsung Display Co., Ltd.

Woogeun Lee

Youngjae Jeon

Seokhwan Bang

Soojung Chae

Seungsok Son

Kapsoo Yoon

Joongeol Kim

Jaehyun Lee

Jong-In Kim

Sung-Hoon Lim

Seulki Kim

Kangnam Kim

Hyunseong Kang

Jiyun Hong

Jongin Kim

Do-Hyun Kim

Wonhee Lee

Jin-Won Lee

Kyu-Sik Cho

Sang-Moon Moh

Gwang-bum Ko

Jongmoo Huh

Kwangsoo Lee

Kyumin Kim

Seungrae Kim

Seungha Choi

Kisu Jin

Donghoon Shin

Junewhan Choi

Jongbum Choi

Sung-hoon Lim

Youngjoo Choi

Sunghoon Lim

GwonHeon Ryu

Junhong Na

A display apparatus includes a substrate, a semiconductor layer on the substrate, the semiconductor layer including an oxide semiconductor, a channel region and a first region which extends from the channel region to a first edge of the semiconductor layer and has a lower resistance than that of the channel region, a first inorganic insulating layer covering the semiconductor layer and including a first contact hole which overlaps the first region, a first electrode on the first inorganic insulating layer, overlapping the first region and electrically connected to the first region through the first contact hole, a gate electrode on the first inorganic insulating layer and overlapping the channel region, a second inorganic insulating layer covering the first electrode and the gate electrode, and a display element on the second inorganic insulating layer.

Display apparatus and method of providing display apparatus

A gate driving circuit includes a stage configured to output a scan gate signal based on a scan clock signal, a voltage of a first node, and a voltage of a second node, and to output a sensing gate signal based on, a sensing clock signal, the voltage of the first node, and the voltage of the second node. The stage includes: a first sensing circuit configured to select a gate line to be sensed based on a S1 signal or to determine a frame reset based on a S7 signal; a first inverting circuit configured to control the first sensing circuit base on the S7 signal; and a second sensing circuit configured to control the voltage of the first node using the first sensing circuit based on a S2 signal. The frame reset is determined based on a maximum frequency of a variable frame frequency.

Gate driving circuit and display device including the same

Provided are a display device in which a bright spot occurring due to a defective pixel circuit may be repaired into a dark spot, and a method of repairing the display device. The display device includes a substrate, a thin-film transistor arranged on the substrate and including a semiconductor layer and a gate electrode overlapping at least a portion of the semiconductor layer, a pixel electrode on the substrate, a node connection line connecting the thin-film transistor and the pixel electrode to each other, and an initialization voltage line arranged on the substrate and extending in a first direction, wherein the node connection line includes a repair portion overlapping the initialization voltage line in a plan view.

Display device having a repair portion

A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a thin film transistor arranged on the substrate corresponding to the display area and including a semiconductor layer and a gate electrode, a pad electrode arranged on the substrate corresponding to the peripheral area and including a material the same as that of the semiconductor layer, and a first insulating layer arranged on the thin film transistor and the pad electrode and including an opening that partially exposes the pad electrode. Accordingly, failure to perform a normal operation by a pixel circuit and a light-emitting element may be prevented.

Display apparatus with exposed pad electrode

A display apparatus includes a substrate including a display area and a peripheral area adjacent to the display area, a thin-film transistor located in the display area of the substrate and including a semiconductor layer and a gate electrode overlapping a channel region of the semiconductor layer, a conductive layer disposed between the substrate and the semiconductor layer and including a first electrode located in the display area of the substrate and a pad electrode located in the peripheral area of the substrate, and a first insulating layer disposed between the conductive layer and the semiconductor layer and having a first opening that exposes at least a portion of an upper surface of the pad electrode.

Display apparatus and method of manufacturing the same

A gate driving circuit includes a plurality of unit stages connected to each other, wherein each of the plurality of unit stages includes a first transistor having a lower gate electrode, an upper gate electrode disposed on the lower gate electrode, an active layer disposed between the lower gate electrode and the upper gate electrode, a first electrode contacting a first portion of the active layer, and a second electrode contacting a second portion of the active layer, a first capacitor defined by a first region in which the lower gate electrode and the upper gate electrode overlap, and a second capacitor defined by a second region in which the upper gate electrode and the first electrode overlap, wherein the upper gate electrode and the lower gate electrode are electrically coupled to each other in the first region where the upper gate electrode and the lower gate electrode overlap to form the first capacitor.

A display device includes a driving transistor on a substrate, a light emitting element disposed on the driving transistor, and a lower electrode disposed between the substrate and the driving transistor. The driving transistor includes an active pattern and a gate electrode. The active pattern includes a first region, a second region, and a channel region between the first region and the second region. The light emitting element is electrically connected to the second region of the active pattern. The lower electrode overlaps the channel region of the active pattern and provides a back bias voltage to the driving transistor.

Display device

An organic light emitting diode display device includes a substrate, an active layer disposed on the substrate and including a metal oxide-based semiconductor, a gate electrode disposed on the active layer, an insulating layer disposed on the gate electrode, source and drain electrodes disposed on the insulating layer, a light emitting element on the source and drain electrodes, and a gate insulating layer between the active layer and the gate electrode. The gate insulating layer includes first and second gate insulating layers. The first gate insulating layer directly contacts the active layer and has a first amount of nitrogen. The second gate insulating layer is disposed on the first gate insulating layer and has a second amount of nitrogen that is different from the first amount of nitrogen.

Organic light emitting diode display device and method of manufacturing organic light emitting diode display device

A thin film transistor substrate includes: a substrate; an oxide semiconductor layer disposed on the substrate; a gate electrode disposed on the substrate; a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode connected to the oxide semiconductor layer, the source electrode and the drain electrode being spaced apart from each other. The gate insulating layer includes: a first gate insulating layer having an oxygen content lower than that of a stoichiometric composition; and a second gate insulating layer including a material substantially the same as a material which the first gate insulating layer may include, and having an oxygen content higher than that of the first gate insulating layer, and the first gate insulating layer and the oxide semiconductor layer directly contact each other.

Thin film transistor substrate and manufacturing method thereof

A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.

Thin film transistor substrate and method of manufacturing the same

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Yongin-si, South Korea

Woogeun Lee