Hyundai Electronics Industries Co. Ltd.

Woodward Yang

Ju Il Lee

Nan Yi Lee

Suk Joong Lee

Oh Bong Kwon

Chan-Ki Kim

Jin Keun Oh

Kang-Jin Lee

Gyu Tae Hwang

Joo Sun Choi

Jae Kyung Wee

Jae-Won Eom

Phil Jung Kim

Young Ho Seol

Ho Youe Cho

The present invention relates to a picture display using CMOS (Complementary Metal Oxide Semiconductor) image sensor; and, more particularly, to a CMOS image sensor having a testing circuit embedded therein and a method for verifying operation of the CMOS image sensor using the testing circuit. The CMOS image sensor according to the present invention includes a control/interface unit for controlling its operation sensor using a state machine and for interfacing the CMOS image sensor with an external system; a pixel array including a plurality of pixels sensing images from an object and generating analogue signals according to an amount of incident light; a converter for converting the analogue signals into digital signals to be processed in a digital logic circuit; and a testing circuit for verifying operations of the converter and the control/interface unit, by controlling the converter.

CMOS image sensor with testing circuit for verifying operation thereof

A programmable analog-to-digital converter (ADC) for use in a CMOS imaging system, the CMOS imaging system having an array of pixels, and the ADC configured to provide a enhanced conversion resolution for pixels providing a low analog voltage level and a relatively coarser conversion resolution for pixels providing a relatively higher analog voltage level.

Image sensor with analog-to-digital converter that generates a variable slope ramp signal

The anti-fuse circuit includes three sub-blocks: a multiplexer having inputs of control signals and addresses and yielding the activation of a programming signal and program addresses; a programming voltage generator consisting of an oscillator and a charge pump; and an anti-fuse unit circuits for the program/read of anti-fuse states. For an anti-fuse program at the special test mode, a program address generation circuit having inputs of control signals and addresses activates the programming voltage generator and makes a special or program address for selection of anti-fuse. In the normal mode, the program address generation circuit and an internal power generator remain at an inactive state. In anti-fuse unit circuit, the program address and the programming voltage signal from the programming voltage generator serve to switch the terminal of the anti-fuse up to a programming voltage level when the anti-fuse is selected for programming of anti-fuse elements.

Antifuse circuitry for post-package DRAM repair

A CMOS image sensor according to the present invention has a low-voltage photodiode which is fully depleted at a bias of 1.2-4.5V. The photodiode comprises: a P-epi layer; a field oxide layer dividing the P-epi layer into a field region and an active region; a N,region formed within the P-epi layer, wherein the first impurity region is apart from the isolation layer; and a P,region of the conductive type formed beneath a surface of the P-epi layer and on the N,region, wherein a width of the P,region is wider than that of the N,region so that a portion of the P,region is formed on the P-epi layer, whereby the P,region has the same potential as the P-epi layer.

CMOS image sensor with equivalent potential diode and method for fabricating the same

CMOS image sensor with equivalent potential diode

Growing community of inventors

Ichon-shi, South Korea

Woodward Yang