Samsung Electronics Co., Ltd.

Woochul Jung

Jaewoo Park

Myoungbo Kwak

Eunseok Shin

Junghwan Choi

Yongsun Lee

Junhan Choi

Jungho Ko

Sunjae Lim

A parallel-to-serial interface circuit includes an equalizer to delay odd data by a half period and sequentially generate odd pre data, odd main data, and odd post data, and delay even data by a half period and sequentially generate even pre data, even main data, and even post data, a final parallel-to-serial converter to sequentially and alternately select the even pre data and the odd pre data to generate pre data, sequentially and alternately select inverted odd main data and inverted even main data to generate inverted main data, and sequentially and alternately select the even post data and the odd post data to generate post data, and a driver to drive the pre data to generate a pre data level, drive the inverted main data to generate an inverted main data level, and drive the post data to generate a post data level.

Parallel-to-serial interface circuit and transmission device having the same

A voltage regulator and a semiconductor memory device having the same are disclosed. The voltage regulator includes an amplifier configured to amplify a difference between a reference voltage and a feedback voltage to generate an amplifier output voltage, a voltage feedback unit connected between an output supply voltage generation node and a ground voltage and configured to generate the feedback voltage, a first transfer gate unit connected between an input supply voltage and the voltage generation node and driven in response to the amplifier output voltage to provide first current, a current load replica unit connected between the voltage generation node and the ground voltage and configured to consume the first current, and a transfer unit connected between the input supply voltage and the voltage generation node and driven in response to the amplifier output voltage when the current load unit performs an operation, to provide second current.

Voltage regulator and semiconductor memory device having the same

A phase locked loop device may include: a frequency modulating circuit configured to output a reference signal obtained by multiplying a frequency of an input signal by a predetermined ratio based on the input signal; a sigma-delta modulator configured to output division ratio information on one of a plurality of division rates at a number of times proportional to a frequency of the reference signal; and a phase locked loop (PLL) circuit configured to determine whether to activate based on a command signal, and, when activated, perform a phase-locking operation based on a fractional division based on the reference signal and the division ratio information.

Phase locked loop device and method of operating ihe same

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Hwaseong-si, South Korea

Woochul Jung