Samsung Electronics Co., Ltd.

Woochul Jeon

Jongseob Kim

Younghwan Park

Jaejoon Oh

Sunkyu Hwang

Junhyuk Park

Boram Kim

Joonyong Kim

Soogine Chong

Provided are a nitride semiconductor buffer structure and a semiconductor device including the same. The buffer structure may include a plurality of buffer layers between a substrate and an active layer. The active layer may include a nitride semiconductor. The plurality of buffer layers may be stacked on each other on the substrate. Each of the plurality of buffer layers may have a super lattice structure and may include a doped nitride semiconductor. The plurality of buffer layers may have different compositions from each other. Adjacent buffer layers, among the plurality of buffer layers, may have different doping concentrations from each other.

Nitride semiconductor buffer structure and semiconductor device including the same

A high electron mobility transistor includes a channel layer; a barrier layer on the channel layer and having an energy bandgap greater than an energy bandgap of the channel layer; a gate structure on the barrier layer; a source electrode and a drain electrode spaced apart from each other on the barrier layer with the gate structure therebetween; a field plate electrically connected to the source electrode and extending above the gate structure; and a field dispersion layer in contact with the barrier layer and the drain electrode. The field dispersion layer may extend toward the gate structure.

High electron mobility transistor

A semiconductor device includes: a semiconductor substrate including a first surface and a second surface facing each other and including a first semiconductor material; a plurality of fin structures upwardly extending on the first surface of the semiconductor substrate, spaced apart from each other by a plurality of trenches, and including the first semiconductor material as the semiconductor substrate; an insulating layer on the first surface of the semiconductor substrate filling at least a portion of the plurality of trenches; a gate electrode layer between the plurality of fin structures and surrounded by the insulating layer; a first conductive layer covering the plurality of fin structures; a second conductive layer on the second surface of the semiconductor substrate; and a shield layer between the gate electrode layer and the semiconductor substrate, surrounded by the insulating layer, and electrically connected to the first conductive layer.

Semiconductor device and power switching system including the same

The present disclosure provides a high electron mobility transistor including a channel layer; a barrier layer on the channel layer and configured to induce formation of a 2-dimensional electron gas (2DEG) to the channel layer; a p-type semiconductor layer on the barrier layer; a first passivation layer on the barrier layer and including a quaternary material of Al, Ga, O, and N; a gate electrode on the p-type semiconductor layer; and a source electrode and a drain electrode provided on both sides of the barrier layer and separated from the gate electrode.

High electron mobility transistor and method of manufacturing the same

A nitride semiconductor device having a field effect gate is disclosed. The disclosed nitride semiconductor device includes a high-resistance material layer including a Group III-V compound semiconductor, a first channel control layer on the high-resistance material layer and including a Group III-V compound semiconductor of a first conductivity type, a channel layer on the channel layer control layer and including a nitride semiconductor of a second conductivity type opposite to the first conductivity type, and a gate electrode having a contact of an ohmic contact type with the first channel control layer.

Growing community of inventors

Suwon-si, South Korea

Woochul Jeon