Samsung Electronics Co., Ltd.

Woochang Lim

Sechung Oh

Juhyun Kim

Woojin Kim

Kiwoong Kim

Younghyun Kim

Jangeun Lee

Junho Jeong

Sukhun Choi

Jeahyoung Lee

Jangeum Lee

A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor device includes a lower electrode and a magnetic tunnel junction structure disposed on the lower electrode. The magnetic tunnel junction structure includes a seed pattern disposed on the lower electrode. The seed pattern includes an amorphous seed layer and an oxidized seed layer disposed on a surface of the amorphous seed layer. The seed pattern may prevent the lattice structure of the lower electrode from adversely affecting the lattice structure of a pinned magnetic layer of the magnetic tunnel junction structure.

Semiconductor device having magnetic tunnel junction structure and method of fabricating the same

A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

Magnetic memory device

A magnetic memory device includes a magnetic pattern, a reference pattern, a tunnel barrier pattern interposed between the magnetic pattern and the reference pattern, and at least one magnetic segment disposed inside the magnetic pattern. The magnetic segment(s) is/are of magnetic material whose direction of magnetization has at least a component which lies in a plane perpendicular to the magnetization direction of the magnetic pattern.

Magnetic memory devices

Growing community of inventors

Seongnam-si, South Korea

Woochang Lim