Samsung Electronics Co., Ltd.

Woo-young Yang

Chang-youl Moon

Jeong-yub Lee

Xianyu Wenxu

Yong-young Park

Sang-jun Choi

Yong-sung Kim

Ki-Hong Kim

Joo-ho Lee

Young-eal Kim

Seong-yong Park

A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Semiconductor device and manufacturing method of semiconductor device using metal oxide

A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer.

Transistor and method of operating same

A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.

Methods of transferring graphene and manufacturing device using the same

Growing community of inventors

Hwaseong-si, South Korea

Woo-young Yang