Skhynix Inc.

Samsung Electronics Co., Ltd.

Hynix Semiconductor Inc.

Woo-Young Park

Yun-Hyuck Ji

Seung-Mi Lee

Beom-Yong Kim

Tae-Yoon Kim

Kee-Jeung Lee

Kwan-Woo Do

Jong-Woo Kim

Kwang-ho No

Moon-Sig Joo

Kyung-Woong Park

Moon-Bae Park

Wan-Gee Kim

Young-Seok Ko

Ji-Hoon Ahn

Soo-Gil Kim

Jae-Hyoung Koo

David Charles Hogan

A variable resistance semiconductor device includes a lower conductive wiring; a bottom electrode over the lower conductive wiring; a selection element pattern over the bottom electrode; a first intermediate electrode over the selection element pattern; a second intermediate electrode over the first intermediate electrode; a variable resistance element pattern over the second intermediate electrode; a top electrode over the variable resistance element pattern; and an upper conductive wiring over the top electrode. The first intermediate electrode includes a first material. The second intermediate electrode includes a second material which has a better oxidation resistance and a higher work function than the first material.

Variable resistance semiconductor device having oxidation-resistant electrode

A method for fabricating a semiconductor device includes: forming an insulation layer over a semiconductor substrate; forming a first conductive layer over the insulation layer; forming a plurality of buried bit lines and insulation layer patterns isolated by a plurality of trenches, wherein the plurality of trenches are formed by etching the first conductive layer and the insulation layer; forming a sacrificial layer to gap-fill the trenches; forming a second conductive layer over the buried bit lines and the sacrificial layer; and forming a plurality of pillars over each of the buried bit lines by etching the second conductive layer.

Semiconductor device having buried bit line and method for fabricating the same

A semiconductor device includes: a vertical electrode provided over a substrate; a variable resistance layer provided at least a sidewall of the vertical electrode; a plurality of horizontal electrodes extending from the sidewall of the vertical electrode and having the variable resistance layer interposed; a transition metal oxide layer provided (i) between the vertical electrode and the variable resistance layer or (ii) between the plurality of horizontal electrodes and the variable resistance layer; and a threshold voltage switching layer provided in the transition metal oxide layer and selectively between the vertical electrode and the any of the plurality of horizontal electrodes.

Semiconductor device and electronic device including the same

A semiconductor device includes a substrate including a first region and a second region, a gate dielectric layer formed on the substrate, and a metal electrode layer formed on the gate dielectric layer and including a compound of carbon and nitrogen, wherein a metal electrode formed from the metal electrode layer in the first region has a work function lower than a work function of a metal electrode formed from the metal electrode layer in the second region and a nitrogen concentration of the metal electrode of the first region is smaller than a nitrogen concentration of the metal electrode of the second region.

Semiconductor device having metal carbon nitride electrodes with different work functions

A semiconductor device includes a gate insulation layer formed over a substrate and having a high dielectric constant, a gate electrode formed over the gate insulation layer and a work function control layer formed between the substrate and the gate insulation layer and inducing a work function shift of the gate electrode.

Semiconductor device with metal gates and method for fabricating the same

A method for fabricating a capacitor includes: forming a first silicon layer over a semiconductor substrate, where the first silicon layer is doped with a dopant; forming an undoped second silicon layer over the first silicon layer; forming an opening by etching the second silicon layer and the first silicon layer; forming a storage node in the opening; and removing the first silicon layer and the second silicon layer.

Method for fabricating capacitor with high aspect ratio

A method for fabricating a variable resistance memory device includes forming an oxygen-deficient first metal oxide layer over a first electrode, forming an oxygen-rich second metal oxide layer over the first metal oxide layer, treating the first and second metal oxide layers with hydrogen-containing plasma, forming an oxygen-rich third metal oxide layer, and forming a second electrode over the third metal oxide layer.

Variable resistance memory device and method for fabricating the same

Method for fabricating semiconductor device by changing work function of gate metal layer

A liquid image developing system including a development container in which a developer having a charge is stored, a photosensitive body, and a development roller which is partially soaked in the developer in the development container and to rotate and form development nip. The system further includes a depositing portion to apply an electric potential to attach the developer to the surface of the development roller, a metering portion to regulate the developer attached to the surface of the development roller at a predetermined thickness at a front end of the development nip, and a cleaning portion to clean the surface of the development roller at a rear end of the development nip. The cleaning portion includes an electrical cleaning member which contacts the development roller and removes the developer attached to the surface of the development roller by an electrical attractive force, and a mechanical cleaning member which contacts the development roller and mechanically cleans the developer attached to the surface of the development roller.

Liquid image developing system

A pair of cleaning apparatuses for a liquid electrophotographic printer that can completely remove to residual toner from both a photo receptor belt and a transfer roller, respectively. Each cleaning apparatus is supplied with a liquid solvent used to dissolve toner remaining on the transfer roller and the photo receptor belt after a printing operation. Each of the pair of cleaning apparatuses can engage and disengage to and from the photo receptor belt and the transfer roller respectively upon user actuation or entry of a sheet of recording media into the electrophotographic printing apparatus. Each cleaning apparatus contains in rectangular felt material soaked with solvent positioned to mate with the surfaces of the photo receptor belt and the transfer roller.

Apparatus for dissolving residual toner from a transfer roller and a photoreceptor belt of a liquid electrophotographic printer upon printing of a sheet/user actuation

Growing community of inventors

Gyeonggi-do, South Korea

Woo-Young Park