Korea Advanced Institute of Science and Technology

Woo Young Kim

Seung Hoon Lee

Hyeon Don Kim

Hee Chul Lee

Bum Ki Min

Teun Teun Kim

A memory device may be provided that includes: a substrate; a coupling layer which is located on the substrate and has electrical conductivity; a meta-atomic layer which is located on or under the coupling layer; a memory layer which is located on the meta-atomic layer; and an electrode layer which is located on the memory layer and has electrical conductivity. The memory layer is composed of a material which produces spontaneous polarization at a voltage equal to or higher than a predetermined voltage. Through this, the memory device can be electrically driven and can continuously maintain modulated optical characteristics. Also, the memory device according to the embodiment of the present invention can modulate optical characteristics by multiple electrical inputs.

Memory device

Disclosed is a multi-bit memory device including: a first electrode; a third electrode which is disposed apart from the first electrode; a second electrode which is disposed between the first electrode and the third electrode; a first memory unit which is disposed between the first electrode and the second electrode and includes a material which is electrically polarized and exhibits hysteresis; and a second memory unit which is disposed between the second electrode and the third electrode and includes a material which is electrically polarized and exhibits hysteresis.

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Daejeon, South Korea

Woo Young Kim