Samsung Electronics Co., Ltd.

Woo-young Chung

Hee-Sung Kang

Mu-kyeng Jung

Hyuk-Ju Ryu

Kyung-soo Kim

A complementary metal oxide semiconductor (CMOS) device having improved performance includes a first device active region including at least one pair of transistor active regions wherein one transistor active region has a first width and the other transistor active region for forming a contact has a second width, a first gate arranged on the first device active region, a MOS transistor of a first conductivity type including a source/drain region of the first conductivity type formed in the first device active region, a second device active region having a third width greater than the first width, a second gate arranged on the second device active region, and a MOS transistor of a second conductivity type including a source/drain region of the second conductivity type formed in the second device active region.

Growing community of inventors

Seongnam-si, South Korea

Woo-young Chung