Samsung Electro-Mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Electronics and Telecommunications Research Institute

Skhynix Inc.

Crucialtec Co.ltd

Yonsei University

Sogang University Research Foundation

Seoul National University

Hyundai Motor Company

Lg Information & Communications, Ltd.

Kia Motors Corporation

Sogang University Research Business Development Foundation

Woo Young Choi

Joo Yul Ko

Joo Hyoung Lee

Jong Woo Lee

Soo Woong Lee

Je Hyuk Ryu

Byung Joo Hong

Byung Seong Bae

Jong Uk Kim

Ho Sik Jeon

Sang A Oh

So Hyun Jeong

Ju An Yoon

Jun Suk Lee

Jong-Jin Lee

Ji-Hoon Park

Byung Jun Ahn

Yong Woon Ji

Jung Eui Park

Bup Joong Kim

Ivan Galkin

Jun-Yeob Lee

Dong Yun Kim

Hui-Jung Kim

Jung Chul Gong

Bhum Cheol Lee

Sang Hoon Kim

Jong Pil Kim

Ho Kwon Yoon

Byung Gook Park

Chul Min Park

Sang-Il Han

Yoo Sang Hwang

Tae Sik Cheung

Hyoung Soo Ko

Jong Heon Kim

Seung Bum Hong

Kyu Hyun Lee

Kyu Jin Kim

Jae Young Song

Min Hyeong Kim

Sang Wan Kim

Min Soo Kim

Dong Eun Cha

Seung Woo Lee

Chul Huh

Hyun Kyung Kim

Seung Mok Lee

Kyung Hyun Park

Je Hoon Yun

Min Kyu Kim

Dong Ho Chu

Phil Jung Jeong

Bong Tae Kim

Byoung-Joo Kim

Kwang Hyun Lee

Young Ahn Leem

Dae Hyun Kwon

Jea Hoon Yu

Su Ram Cha

Hak Suh Kim

Yang Geol Lee

Tae Ho Lim

Yong Wook Ra

Dong Hun Han

Jae Wook Lee

Done Sik Yoo

Jeong Kyu Lim

Ju Yong Kim

Hun Kim

Kook Jin Nam

Myung Hwan Seo

Seung-Ryoung Ji

Gwang Pyo Park

Kwang Chun Choi

A content addressable memory device including a memory cell array including a plurality of memory cells, each of which has a ferroelectric tunnel field effect transistor (FeTFET), and a match amplifier connected to the plurality of memory cells through a plurality of match lines may be provided. The FeTFET includes a first doped region including a first conductivity type, a second doped region including a second conductivity type different from the first conductivity type, a channel region formed between the first doped region and the second doped region, and a gate formed on the channel region and including a ferroelectric layer.

Content addressable memory device and operating method thereof

A method for testing a focusing characteristic of a camera may include setting a camera to align the camera and a first chart structured to provide a first scene for testing such that the camera is focused on the first chart disposed at a first distance from the camera, measuring a blur in an image of a second chart captured at a second distance from the camera, the second chart being structured to provide a second scene for testing, and evaluating a phase difference range (PDR) of the camera based on the measured blur and a blur calculated through a circle of confusion (CoC) model.

Camera testing device and method for testing focusing characteristic of camera

An electronic device includes a narrowband internet of things (NB-IoT) circuit; a shared central processor to control the narrowband internet of things circuit; a shared memory to store data or code from the shared central processor; and a communicator controlled by the shared central processor. The communicator stores the data or the code in the shared memory.

Electronic system for electronic device

A 3-dimensional flash memory device and methods of fabricating and driving the same are provided. The device includes: a channel layer extending over a substrate in a first direction perpendicular to a surface of the substrate; an information storing layer extending along a sidewall of the channel layer in the first direction; control gates each surrounding the channel layer, with the information storing layer between the channel layer and the control gates; an insulating layer being between the control gates in the first direction and separating the control gates from each other; a fixed charge region disposed at an interface of the insulating layer and the information storing layer or in a portion of the information storing layer between the control gates in the first direction; and a doped region induced by the fixed charge region and disposed at a surface of the channel layer facing the fixed charge region.

3-dimensional NAND flash memory device, method of fabricating the same, and method of driving the same

Disclosed is an image sensing device including a pixel array, wherein the pixel array includes a first sub-pixel array including pixels each having a green filter and disposed in a first diagonal direction, and pixels each having a white filter and disposed in a second diagonal direction, a second sub-pixel array including pixels each having the green filter and disposed in the first diagonal direction, and pixels each having the white filter and disposed in the second diagonal direction, a third sub-pixel array including pixels each having a red filter and disposed in the second diagonal direction, and pixels each having the white filter and disposed in the first diagonal direction, and a fourth sub-pixel array including pixels each having a blue filter and disposed in the second diagonal direction, and pixels each having the white filter and disposed in the first diagonal direction.

Image sensing device

A semiconductor device including a device isolation layer defining an active region; a first trench in the device isolation layer; a second trench in the active region; a main gate electrode structure filling a portion of the first trench and including a first barrier conductive layer and a main gate electrode; a pass gate electrode structure filling a portion of the second trench and including a second barrier conductive layer and a pass gate electrode; a support structure filling another portion of the second trench above the pass gate electrode; a first capping pattern filling another portion of the first trench above the main gate electrode; and a second gate insulating layer extending along a bottom and sidewall of the second trench, wherein the second barrier conductive layer is between the second gate insulating layer and the pass gate electrode and extends along a bottom and sidewall thereof.

Semiconductor device

Electronic device and system for the same

A touch input sensing device configured to be added to an electronic device, the electronic device including a touch input unit, the touch input unit including a first touch member integrated with a housing. The touch input sensing device includes a resonant circuit configured to generate a resonance signal having a resonant frequency that varies based on a touch of the touch input unit, a digital frequency counter configured to count a reference frequency signal based on the resonance signal, or count the resonance signal based on the reference frequency signal, to generate a count value, and a touch detector configured to detect whether the touch of the touch input unit has occurred based on the count value generated by the digital frequency counter, and output a touch detection signal indicating whether the touch has occurred.

Touch input sensing apparatus for housing of electric device

Disclosed are a temperature control method of an optical modulator and an apparatus therefore. The temperature control apparatus of an optical modulator according to an exemplary embodiment of the present disclosure is to provide a temperature control method of an optical modulator which performs a calibration mode to select a heater control voltage with a maximum optical modulation amplitude (OMA) while adjusting a heater control voltage which drives a heater of the optical modulator, stores a reference temperature measurement code based on a measured temperature value of the optical modulator while driving the heater at a selected heater control voltage, and performs a lock mode which controls a temperature of the optical modulator by changing the heater control voltage using the reference temperature measurement code after stopping the optical modulation amplitude detecting operation and an apparatus therefor.

Method and apparatus for controlling temperature for optical modulator

A 3-dimensional flash memory device and methods of fabricating and driving the same are provided. The device includes: a channel layer extending over a substrate in a first direction perpendicular to a surface of the substrate; an information storing layer extending along a sidewall of the channel layer in the first direction; control gates each surrounding, the channel layer, with the information storing layer between the channel layer and the control gates; an insulating layer being between the control gates in the first direction and separating the control gates from each other; a fixed charge region disposed at an interface of the insulating layer and the information storing layer or in a portion of the information storing layer between the control gates in the first direction; and a doped region induced by the fixed charge region and disposed at a surface of the channel layer facing the fixed charge region.

A sensing circuit in a device having a moving body in which a unit to be detected including first and second pattern units spaced apart from each other is formed includes an oscillation circuit unit including first and second oscillation circuits fixedly mounted on a substrate spaced apart from the unit to be detected, including, respectively, first and second sensing coils having first and second inductance values depending on areas of overlap between the first and second sensing coils and the first and second pattern units and outputting, respectively, first and second sensed oscillation signals based on the first and second inductance values; and a sensing circuit outputting an output signal having movement information of the moving body based on each period count value for each of the first and second sensed oscillation signals using a reference oscillation signal.

Sensing circuit of moving body and moving body sensing device

A touch sensing device in an electronic device, the electronic device including a touch manipulation unit disposed in a housing of the electronic device, the touch manipulation unit including a first insulating member penetrating through the housing, the touch sensing device including a first sensor unit disposed on an internal surface of the first insulating member, and an oscillation circuit connected to the first sensor unit, the oscillation circuit being configured to generate a first oscillation signal having a first resonance frequency that varies in response to a touch capacitance generated in response to the first insulating member being touched, wherein the first sensor unit contacts the internal surface of the first insulating member, and does not contact the housing.

Touch sensing device and electronic device capable of identifying positions of multiple touches

A sensing device with a fingerprint sensor is provided. The sensing device includes a touch input pattern included in the fingerprint sensor, an oscillation circuit connected to the touch input pattern and configured to change a capacitance of the oscillation circuit when a touch occurrence is sensed by the touch input pattern and generate an oscillation signal based on the change in the capacitance, and an operation detection circuit configured to detect a touch occurrence based on a frequency included in the oscillation signal input from the oscillation circuit and generate a detection signal.

Sensing device with fingerprint sensor

Semiconductor device and method of manufacturing the semiconductor device

Growing community of inventors

Seoul, South Korea

Woo Young Choi