Samsung Electronics Co., Ltd.

Woo-Yeol Maeng

Yong-Woo Jeon

Jae-hyun Yoo

Kwan-young Kim

Jin-Hyun Noh

According to example embodiments, a semiconductor device includes a first fin, a second fin that is separated from the first fin, and a gate on the first fin and the second fin. The gate crosses the first fin and the second fin. The first fin includes a first doped area at both sides of the gate. The first doped area is configured to have a first voltage applied thereto. The second fin includes a second doped area at both sides of the gate. The second doped area is configured to have a second voltage applied thereto. The second voltage is different than the first voltage.

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Gunpo-si, South Korea

Woo-Yeol Maeng