Iucf-hyu

Woo Sik Nam

Jea Gun Park

Sung Ho Seo

Jong Dae Lee

Dong Won Shin

Dal Ho Kim

Hyun Min Seung

Jong Sun Lee

Gon Sub Lee

Su Hwan Lee

Provided is a nonvolatile memory device. The nonvolatile memory device includes: first and second electrodes spaced from each other; at least one nano crystal layer disposed between the first and second electrodes; and first and second material layers respectively disposed between the first and second electrodes and the nano crystal layer and having a bistable conductive property, wherein the first and second material layers are formed asymmetrical to each other.

Nonvolatile memory device

Provided are a luminescent device and a method of manufacturing the same. The luminescent device includes a charge trapping layer having bistable conductance and negative differential resistance (NDR) characteristics, and an organic luminescent layer electrically connected to the charge trapping layer. The charge trapping layer comprise a nanocrystal layer intervened in an organic layer, and the nanocrystal layer comprises a plurality of nanocrystals.

Luminescence device and method of manufacturing the same

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Seoul, South Korea

Woo Sik Nam