Samsung Electronics Co., Ltd.

Woo-seok Ko

Yu-sin Yang

Sang-kil Lee

Chung-sam Jun

Min-Kook Kim

Sung-Yoon Ryu

Seong-Jin Yun

Chang-Hoon Choi

Byeong-hwan Jeon

Souk Kim

Won-Don Joo

Hyung-Su Son

Sue-Jin Cho

Hyun-woo Kim

Young-Hwan Kim

Ji-Young Shin

Sang Don Jang

Byeong Hwan Jeon

Young-hoon Sohn

Hyoung-jo Jeon

Kwan-Woo Ryu

Gil-woo Song

Sung-yoon Ryu

Tae-Heung Ahn

Kang-woong Ko

Masahiro Horie

Joon-Seo Song

Min-chul Yoon

Jae-youn Wi

Sang-kyeong Han

Ho-Jeong Kwak

Jeong-hoi Kim

Baek-man Sung

Kwang-il Shin

Chae-ho Shin

A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.

Method of inspecting wafer using electron beam

A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.

Surface inspecting method

A broadband light source includes a first electrodeless lamp to generate first broadband light from plasma, a first elliptical reflector having first and second focuses, the first elliptical reflector enclosing a rear portion of the first electrodeless lamp positioned at the first focus of the first elliptical reflector such that the first broadband light is reflected from the first elliptical reflector toward a light collector as a collective light, a symmetrically curved reflector having a third focus, the symmetrically curved reflector positioned such that the third focus is coincident with one of the first and second focuses, and a laser irradiator to provide a laser beam to the first electrodeless lamp.

Broadband light source and optical inspector having the same

Spectral ellipsometry measurement systems are provided including a polarizer that rotates at a first angle and adjusts a polarizing direction of incident light of a measurement sample; a compensator that rotates at a second angle, different from the first angle, and adjusts a phase difference of the incident light; an analyzer that rotates at a third angle and adjusts a polarizing direction of light reflected on the measurement sample; a detector that detects a spectral image from the reflected light; a controller that controls one of the polarizer, the compensator, and the analyzer according to polarizer-compensator-analyzer (PCA) angle sets including the first to third angles; and a processor that receives, from the detector, a first spectral image corresponding to a first PCA angle set and a first wavelength and a second spectral image corresponding to a second PCA angle set and a second wavelength, different from the first wavelength, and generates a polarizer-compensator-analyzer rotating (PCAR) spectral matrix using the first and second spectral images.

Spectral ellipsometry measurement and data analysis device and related systems and methods

Example embodiments relate to an apparatus and method for inspecting a substrate defect. The substrate defect inspecting apparatus includes a substrate, a light source emitting an infrared beam to the substrate, a detector detecting the infrared beam reflected from the substrate, and a defect analyzer receiving first information and second information from the detector and analyzing defects existing in the substrate. According to at least one example embodiment, the second information is acquired during a later process than the first information.

Apparatus and method for inspection of substrate defect

An overlay measuring method includes irradiating an electron beam onto a sample, including a multi-layered structure of overlapped upper and lower patterns formed thereon, to obtain an actual image of the upper and lower patterns. A first image representing the upper pattern and a second image representing the lower pattern are obtained from the actual image. A reference position for the upper and lower patterns is determined from a design image of the upper and lower patterns. A position deviation of the upper pattern with respect to the reference position in the first image and a position deviation of the lower pattern with respect to the reference position in the second image are calculated to determine an overlay between the upper pattern and the lower pattern.

Overlay measuring method and system, and method of manufacturing semiconductor device using the same

An apparatus and a system for measuring the thickness of a thin film are provided. The apparatus includes a signal detector, a Fast Fourier Transform (FFT) generator, an Inverse Fast Fourier Transform (IFFT) generator, and a thickness analyzer. The signal detector detects an electric field signal with respect to a reflected light that is reflected from a thin film. The FFT generator performs FFT with respect to the electric field signal to separate a DC component from an AC component of the electric field signal. The IFFT generator receives the separated AC component of the electric field signal, performs IFFT with respect to the AC component, and extracts a phase value of the AC component. The thickness analyzer measures the thickness of the thin film using the extracted phase value.

Apparatus for measuring thickness of thin film, system including the apparatus, and method for measuring thickness of thin film

A conductive atomic force microscope including a plurality of probe structures each including a probe and a cantilever connected thereto, a power supplier applying a bias voltage, a current detector detecting a first current flowing between a sample object and each of the probes and a second current flowing between a measurement object and each of the probes, and calculating representative currents for the sample and measurement objects based on the first and second currents, respectively, and a controller calculating a ratio between representative currents of the sample object measured by each of the probe structures, calculating a scaling factor for scaling the representative current with respect to the measurement object measured by each of the probes, and determine a reproducible current measurement value based on the second measurement current and the scaling factor may be provided.

Conductive atomic force microscope and method of operating the same

An illumination optic system includes a convex mirror to reflect light from a light source to towards a lens. The light source is at a first focus position and the lens is at a second focus position of the mirror. The system also includes a reflector to reflect light not incident on the lens toward the convex mirror. The reflector has a light guide hole to guide light to the incidence surface of the lens.

Reflector structure of illumination optic system

Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen received from the liquid nitrogen dewar into second gaseous nitrogen. Related methods are also disclosed.

Methods of fabricating microelectronic substrate inspection equipment

A broadband light illuminator of an optical inspector for optically detecting defects of an inspection object may include an electrode-less chamber including a plasma area from which broadband light is generated; a first energy provider, exterior to the chamber, configured to provide first energy for ionizing high pressure gases to form ionized gases in the chamber; a second energy provider, exterior to the chamber, configured to provide second energy for transforming the ionized gases into a plasma state to form the plasma area at a central portion of the chamber; an elliptical reflector having a first focus at which the chamber is positioned and a second focus such that the broadband light is reflected from the elliptical reflector toward the second focus; and a lens unit focusing the reflected broadband light onto the inspection object to form an inspection light for detecting the defects of the inspection object.

Broadband light illuminators

Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen. Related methods are also disclosed.

Microelectronic substrate inspection equipment using helium ion microscopy

A method for inspection of defects on a substrate includes positioning a probe of a scanning probe microscopy (SPM) over and spaced apart from a substrate, includes scanning the substrate by changing a relative position of the probe with respect to the substrate on a plane spaced apart from and parallel to the substrate, and includes measuring a value of an induced current generated via the probe in at least two different regions of the substrate. The value of the induced current is variable according to at least a shape and a material of the substrate. The method further includes determining whether a defect exists by comparing the values of the induced currents measured in the at least two different regions of the substrate.

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Seoul, South Korea

Woo-seok Ko