Samsung Electronics Co., Ltd.

Ulvac, Inc.

Korea Electric Power Corporation

Korea Polytechnic University Industry Academic Cooperation Foundation

Woo-Seok Kim

Sung-Wook Park

Yong-jin Kim

Seung-Ki Chae

Il-Kyoung Kim

Chan Gook Park

Seiichi Takahashi

Ki-Young Yun

Jae-Wook Kim

Jae-Hyuck An

No-Hyun Huh

Kwang-Myung Lee

Kengo Tsutsumi

Myeong-Jin Kim

Hye-Rim Kim

Sang-Wuk Park

Byung-Jun Park

Seong-Eun Yang

Shinji Yanagisawa

Young-Hee Han

Hyo-Sang Youn

Seung-Duck Yu

Hee-Sun Kim

Ji-Young Lee

Kyoung-Ho Jang

Sang-Jin Han

Kyeong-Dal Choi

Ji-Kwang Lee

Sun-Bok Choi

Disclosed are a superconducting current-limiting element for a current limiter and a method of manufacturing a superconducting current-limiting element for a current limiter, in which the current-limiting element is formed in series by stacking linear superconducting wires, or is formed in parallel by stacking superconducting wires so that one or more superconducting wires are disposed in the same layer, thus facilitating the formation of the current-limiting element in series or in parallel and obviating the use of a winding machine when manufacturing the current-limiting element.

Superconductive current limiting element of current limiter and method for manufacturing superconductive current limiting element of current limiter

Temperature sensing circuits are provided. The temperature sensing circuits may include a temperature sensing unit and a buffer unit. The temperature sensing unit may include a transistor that has a first pair of terminals having a first PN junction of the transistor therebetween and a second pair of terminals having a second PN junction of the transistor therebetween. The first pair of terminals are connected together. The temperature sensing unit may output a first temperature sensing voltage comprising a voltage between the second pair of terminals at a first node. The buffer unit may be connected to the first node. The buffer unit may have a cascode follower structure and may output a second temperature sensing voltage that has a magnitude proportional to a magnitude of the first temperature sensing voltage at a second node.

Temperature sensing circuits

A circuit for driving a gate of a power MOS transistor includes an adaptive pull-up unit and an adaptive pull-down unit. The adaptive pull-up unit is connected between a first power source voltage and the gate of the power MOS transistor. The adaptive pull-up unit maximizes pull-up current driving ability. The adaptive pull-down unit is connected between a second power source voltage and the gate of the power MOS transistor. The adaptive pull-down unit maximizes pull-down current driving ability.

Circuit for driving gate of power MOS transistor

A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.

Etching apparatus and etching method

A chamber-status monitoring apparatus includes a plurality of chambers, a time-division multiplexer configured to receive, via optical fiber probes, optical signals from each chamber, to divide each optical signal into first time slots having a predetermined duration, and to multiplex the first time slots to generate an OTDM signal, a multi-input optical emission spectroscope configured to receive and disperse the OTDM signal according to wavelengths to measure spectrum information, and a controller configured to divide the spectrum information of the dispersed OTDM signal into second time slots with a predetermined time interval therebetween, to classify the second time slots according to the chambers to obtain spectrum information of the optical signals of the individual chambers, and to control endpoint detection in each of the chambers in accordance with the spectrum information of the optical signal of the corresponding chamber.

Apparatus and method for monitoring chamber status in semiconductor fabrication process

The present invention relates to a superconducting power transforming apparatus. The superconducting power transforming apparatus according to the present invention comprises a transformer housing having a transforming cable passing hole and filled with a liquid cooling means; a superconducting transformer housed in the transformer housing in a state that the superconducting transformer is immersed in the liquid cooling means; a tap changer housing having a tap changing cable passing hole and vacuum-sealed from outside; a power tap changer housed in the vacuum tap changer housing; and a cable linking pipe vacuum-sealed from the transformer housing and the tap changer housing, and linking the transforming cable passing hole with the tap changing passing hole in order that a transformer winding tap cable connecting the superconducting transformer and the power tap changer passes through. Consequently, it is possible to guarantee stable operation of a superconducting transformer which works at an extremely low temperature and a power tap changer as like On-Load Tap Changer which works at low temperature.

Superconducting power transforming apparatus

Growing community of inventors

Seoul, South Korea

Woo-Seok Kim