Electronics and Telecommunications Research Institute

Woo-Seok Cheong

Jaeheon Shin

Rae-Man Park

Chi-Sun Hwang

Kyung Hyun Kim

Kyoung-Wan Park

Moon-Gyu Jang

Sung Mook Chung

Won-ju Cho

Seong-jae Lee

Chan Hwa Hong

According to an embodiment of the inventive concept, a touch screen panel includes a substrate, touch cells disposed on the substrate and including a driving electrode pattern and a sensing electrode pattern, driving lines and sensing lines connected to the touch cells, and bonding pads connected to the driving lines and the sensing lines. Here, the driving electrode pattern and the sensing electrode pattern are provided by stacking a lower oxide layer, an intermediate metal layer, and an upper oxide layer.

Touch screen panel

An apparatus for fabricating an electrode structure includes a high voltage unit, a plating material part facing the high voltage unit, and a transfer roll to which a negative voltage is applied. The high voltage unit includes a high voltage roll, and an insulating sheath configured to cover a surface of the high voltage roll. The high voltage roll is applied with a voltage of about 1 kV to about 100 kV, the plating material part is applied with a positive voltage, and the high voltage unit and the transfer roll rotate.

Apparatus for fabricating electrode structure

Provided is a fog removing device including a sensor configured to detect fog to generate sensing data, a heater configured to generate heat to remove the fog, and a control unit configured to supply a power to the heater by using the sensing data. The sensor includes a substrate, a first electrode and a second electrode, which are provided on the substrate and electrically disconnected from each other, and a recess region defined between the first and second electrodes.

Fog removing device

An electroplating apparatus includes a substrate, a seed layer provided on a top surface of the substrate, a high-voltage portion provided on a bottom surface of the substrate, a housing sealing the high-voltage portion, an anode structure spaced apart from the seed layer in a direction perpendicular to the top surface of the substrate, first power source generating a first voltage difference between the seed layer and the anode structure, and a second power source applying a second voltage to the high-voltage portion. A positive terminal of the first power source is electrically connected to the anode structure, and a negative terminal of the first power source is electrically connected to the seed layer.

Electroplating apparatus

The present disclosure relates to a transparent electrode, and provides a method for manufacturing a transparent electrode, the method comprising forming a multi-layered transparent conductive film by sequentially laminating a first oxide layer, a metal layer, and a second oxide layer on a transparent substrate, forming a mask pattern on the second oxide layer, performing an etching process using the mask pattern as an etching mask to form, in the second oxide layer, a trench exposing the upper surface of the metal layer, and forming a metal pattern in the trench.

Method for manufacturing transparent electrode

Provided are a solar cell module and a method of manufacturing the same. The solar cell module including: a substrate; a bottom electrode layer discontinuously formed on the substrate; a light absorbing layer formed on the bottom electrode layer and including a first trench that exposes the bottom electrode layer; and a transparent electrode layer extending from the top of the light absorbing layer to the bottom electrode layer at the bottom of the first trench, and including a first oxide layer, a metal layer, and a second oxide layer, all of which are staked on the light absorbing layer and the bottom electrode layer.

Solar cell module and method of manufacturing the same

Provided are touch screen panels with improved transmittance and methods of fabricating the same. the method may include preparing a substrate including a cell region and an interconnection region provided around the cell region, sequentially forming a first buffer layer and a second buffer layer on the substrate, the second buffer layer having a refractive index less than that of the first buffer layer, and forming a transparent electrode on the second buffer layer. The second buffer layer is formed of a SiOC material.

Touch screen panels and methods of fabricating the same

Provided is a thin film depositing apparatus. The thin film depositing apparatus includes: a loading chamber loading a plurality of substrates; a first process chamber connected to the loading chamber and including a plurality of sputter guns inducing a first plasma on the plurality of substrates; a buffer chamber connected to the other side of the first process chamber facing the loading chamber; and a substrate transfer module simultaneously passing the plurality of substrates between the plurality of sputter guns during a process using the first plasma and transferring the plurality of substrates from the first process chamber to the buffer chamber.

Thin film depositing apparatus

Touch screen panels are provided. The touch screen panel may include a first hybrid electrode including first electrode cells arranged on a substrate in a first direction and first connection electrodes connecting the first electrode cells to each other in the first direction, and a second hybrid electrode spaced apart from the first hybrid electrode on the substrate. The second hybrid electrode may include second electrode cells arranged in a second direction crossing the first direction and second connection electrodes connecting the second electrode cells to each other in the second direction. The second electrode cells are disposed between the first connection electrodes. The first hybrid electrode may include a first lower transparent layer and a first metal layer which are sequentially stacked, and the second hybrid electrode may include a second lower transparent layer and a second metal layer which are sequentially stacked.

Methods of modeling a transistor are provided. The method includes the steps of (a) extracting reference mobility values of a channel layer of a transistor including a gate electrode, a source region and a drain region using a reference gate voltage, a reference drain current and a reference drain voltage, (b) fitting a mobility function including model parameters on the reference mobility values to extract the model parameters, and (c) putting the extracted model parameters into a drain current modeling function to calculate a drain current flowing through the channel layer between the drain region and the source region under a bias condition defined by an arbitrary gate voltage applied to the gate electrode and an arbitrary drain voltage applied to the drain region. Related apparatuses are also provided.

Methods of modeling a transistor and apparatus used therein

Provided are a Schottky barrier tunnel transistor (SBTT) and a method of fabricating the same. The SBTT includes a buried oxide layer formed on a base substrate layer and having a groove at its upper surface; an ultra-thin silicon-on-insulator (SOI) layer formed across the groove; an insulating layer wrapping the SOI layer on the groove; a gate formed to be wider than the groove on the insulating layer; source and drain regions each positioned at both sides of the gate, the source and drain regions formed of silicide; and a conductive layer for filling the groove. In the SBTT, the SOI layer is formed to an ultra-thin thickness to minimize the occurrence of a leakage current, and a channel in the SOI layer below the gate is completely wrapped by the gate and the conductive layer, thereby improving the operational characteristics of the SBTT.

Growing community of inventors

Daejeon, South Korea

Woo-Seok Cheong