Sungkyunkwan University

Woo Jong Yu

Ui Yeon Won

Quoc An Vu

Thanh Luan Phan

Vu Quoc An

Young Rae Kim

An electric field variable gas sensor includes a semiconductor substrate, an insulating film disposed on the semiconductor substrate, a semiconductor thin film material disposed on a part of the semiconductor substrate and a part of the insulating film, a gas molecule adsorption inducing material disposed on the semiconductor thin film material, a first electrode disposed on the semiconductor substrate to be spaced apart from the semiconductor thin film material, and a second electrode disposed on the insulating film to be connected with the semiconductor thin film material.

Electric field variable gas sensor including gas molecule adsorption inducing material and manufacturing method thereof

Disclosed is a floating gate memristor device comprising: a substrate; a floating gate disposed on the substrate; an insulating layer covering the floating gate; a first electrode including a plurality of control terminals disposed on the insulating layer and spaced apart from each other, wherein the plurality of control terminals vertically overlap the floating gate; a second electrode spaced away from the first electrode, wherein a ground voltage is applied to the second electrode; and a third electrode disposed on the substrate and electrically connected to the floating gate.

Floating gate memristor device and neuromorphic device having the same

The present disclosure provides a vertical tunneling random access memory comprising: a first electrode disposed on a base substrate; a second electrode vertically spaced from the first electrode; a floating gate disposed between the first electrode and the second electrode and configured to charge or discharge charges; a tunneling insulating layer disposed between the first electrode and the floating gate; a barrier insulating layer disposed between the floating gate and the second electrode; a contact hole passing through the tunneling insulating layer and the barrier insulating layer for partially exposing the first electrode; a semiconductor pattern extending from the second electrode, along and on a portion of a side wall face defining the contact hole, to the first electrode such that one end of the semiconductor pattern is in contact with the first electrode and the other end of the pattern is in contact with the second electrode.

Growing community of inventors

Suwon-si, South Korea

Woo Jong Yu