Samsung Electronics Co., Ltd.

Yonsei University

Woo-Jin Rim

Sung-Hyun Park

Tae-Joong Song

Seong-Ook Jung

Ha-Young Kim

Jong-Hoon Jung

Yong-ho Kim

Jae-Woo Seo

Gyu-Hong Kim

Ki-hong Kim

Gi-young Yang

Soo-Won Kim

Gil-Su Kim

Jae-Ha Lee

Han-Wool Jeong

Woo-Kwan Lee

The semiconductor memory device includes: a memory cell; a sensing circuit connected to the memory cell via a first bit line and a second bit line different from the first bit line, the sensing circuit configured to sense data stored in the memory cell; and a bit line voltage control circuit connected to the memory cell via the first bit line and the second bit line, the bit line voltage control circuit configured to precharge the first bit line to a first voltage that is lower than a supply voltage and to precharge the second bit line to a second voltage that is lower than the supply voltage and is different from the first voltage.

Semiconductor memory device with assymetric precharge

A memory device includes a memory cell array including a plurality of memory cells, a plurality of word lines connected to the plurality of memory cells, a plurality of bit lines connected to the plurality of memory cells, a plurality of complementary bit lines connected to the plurality of memory cells, a plurality of auxiliary bit lines, a plurality of auxiliary complementary bit lines, and a switch circuit. The switch circuit electrically connects the plurality of auxiliary bit lines to the plurality of bit lines during a write operation, electrically connects the plurality of auxiliary complementary bit lines to the plurality of complementary bit lines during the write operation, electrically disconnects the plurality of auxiliary bit lines from the plurality of bit lines during a read operation, and electrically disconnects the plurality of auxiliary complementary bit lines from the plurality of complementary bit lines during the read operation.

Memory cell, memory device, and electronic device having the same

A bidirectional delay circuit includes an input driving circuit and a delay switch circuit. The input driving circuit is connected between an input node and an intermediate node, and the input driving circuit amplifies an input signal received through the input node to generate an intermediate signal through the intermediate node. The delay switch circuit is connected between the intermediate node and a delay node, and the delay switch circuit delays both of rising edges and falling edges of the intermediate signal in response to a gate signal to generate a delay signal through the delay node. The gate signal may transition in response to the input signal.

Bidirectional delay circuit and integrated circuit including the same

In a sense amplifier, a switching transistor is configured to apply a ground voltage to a ground node in response to a sense enable signal. A first detection circuit is configured to output a first detection signal to the first detection node based on a mode signal and a voltage of a bit-line. A second detection circuit is configured to output a second detection signal to the second detection node based on a voltage of a complementary bit-line. A latch circuit is connected to a supply voltage, the first detection node and the second detection node, and configured to output a first amplified signal and a second amplified signal through a latch node and a complementary latch node, respectively, based on the first detection signal and the second detection signal.

Sense amplifiers and memory devices having the same

In a data transmitter, a main line driver circuit transmits an input signal to a receiver via a channel. A pre-emphasis circuit emphasizes a voltage level of the transmitted input signal, and a pre-emphasis controller controls the pre-emphasis circuit. The pre-emphasis controller adjusts a pre-emphasis level of the pre-emphasis circuit to increase an amount of current supplied to the channel at a transition time of the input signal in accordance with the transition condition of the channel.

Data transmitters and methods thereof

Growing community of inventors

Suwon-si, South Korea

Woo-Jin Rim