Tes Co., Ltd

Lee, Woo-Jin

Hwang, Sang-Soo

Cha, Dong-Il

Shin, Ki-Jo

Woo-Jin Lee

Don-Hee Lee

Sang-Soo Hwang

Hong-Jae Lee

Jong-Hwan Kim

Sung-Yean Yoon

Woo-Pil Shim

Dong-Il Cha

Ki-Jo Shin

The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.

Method for depositing protection film of light-emitting element

The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.

Passivation film deposition method for light-emitting diode

The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.

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Busan, South Korea

Woo-Jin Lee