Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Woo Jin Kim

Keun Woo Park

Dong Kyun Ko

Myung Soo Huh

Kil Ho Lee

Gwan Hyeob Koh

In Kyo Kim

Woo Chang Lim

Sang Hwan Park

Suk Won Jung

Se Chung Oh

Jang Eun Lee

Cheol Lae Roh

Jeong Ho Bang

Jeong Heon Park

Joo Suk Kwak

Seon Uk Park

Kyung Wan Kim

Sung Chui Kim

A semiconductor device includes first and second contact plugs in an insulating layer that is on a substrate, the first and second contact plugs spaced apart from each other. A spin-orbit torque (SOT) line on the insulating layer and overlapping the first and second contact plug is provided. A magnetic tunnel junction (MTJ) is on the SOT line. An upper electrode is on the MTJ. Each of the first and second contact plugs includes a recess region adjacent the SOT line. A sidewall of the recess region is substantially coplanar with a side surface of the SOT line and a side surface of the MTJ.

Semiconductor devices including spin-orbit torque line and contact plug

A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.

Method of manufacturing metal oxide film and display device including metal oxide film

A thin film processing apparatus includes a susceptor and a showerhead facing the susceptor. The showerhead includes a first plate including an inner tunnel, a first injection hole, and a second injection hole. The inner tunnel extends across the first plate in a thickness direction of the first plate. The first injection hole penetrates a first surface and a second surface of the first plate on opposite sides of the first plate in the thickness direction. The second injection hole penetrates the second surface of the first plate. The second injection is connected with the inner tunnel.

Thin film processing apparatus and thin film processing method

A method and a device for forming a highly dielectric metal oxide layer. The method includes repeatedly causing a plasma-off period and a plasma-on period while an organic metal compound and an oxidizing agent are continuously injected into a chamber. One cycle includes one plasma-off period and one plasma-on period. During the plasma-off period, a physical and chemical adsorption layer including an organic metal compound and a plurality of atomic layers is formed on a substrate. During the plasma-on period, a metal oxide layer that is thicker than two atomic layers is formed by a chemical reaction of metal atoms in the physical and chemical adsorption layer and oxygen atoms in the oxidizing agent.

Method for forming metal oxide layer, and plasma-enhanced chemical vapor deposition device

A deposition apparatus includes a chamber, a susceptor that supports a substrate in the chamber, an upper electrode facing the susceptor, a showerhead defining a gas inlet space between the upper electrode and the susceptor, a metal source storage to store a metal source supplied to the chamber, a vaporizer to vaporize the metal source, a first gas source to supply a first gas to move the metal source toward the vaporizer, a second gas source to supply a second gas to move the metal source in the vaporizer toward the chamber, a third gas source connected to the chamber to supply a third gas into a reaction space defined between the susceptor and the upper electrode such that the third gas reacts with the metal source, and a fourth gas source connected to the chamber to supply a fourth gas used to clean an inside of the chamber.

Deposition apparatus and deposition method

Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.

Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same

A method for detecting operational errors in a tester of a test system for determining whether a semiconductor device is good or failed includes a diagnostic test having the step of periodically inputting data to the device and checking whether the data can be retrieved intact from the tester. If not, then an operational error may be present in the tester. The method requires that the diagnostic test be carried out after a predetermined number of devices has been tested, and that the data inputted to the device during the diagnostic test be inputted to every I/O pin of the device. The diagnostic test includes inputting a value of 0 to each I/O pin, and then comparing the output of the device to a predetermined expected value. The diagnostic test also includes inputting a value of 1 to each I/O pin, and similarly comparing the output to an expected value.

Method for detecting operational errors in a tester for semiconductor

Growing community of inventors

Hwaseong-si, South Korea

Woo Jin Kim