Hynix Semiconductor Inc.

Woo Jin Kim

Hyo Seob Yoon

Ji Yong Park

Ok Min Moon

Pyeong Won Oh

Hoon Jung Oh

Hyo Gun Yoon

Sang Hyun Lee

Yong Soo Jung

Hyo Geun Yoon

Geun Min Choi

Kee Joon Oh

Dong Joo Kim

Ji Hye Han

Baik Il Choi

Young Wok Song

Baik Ii Choi

A method for fabricating a device isolation structure of a semiconductor device includes the steps of forming a pad oxide layer and a pad nitride layer over a semiconductor substrate including a cell region and a dummy region, etching a portion of the pad nitride layer, the pad oxide layer and the semiconductor substrate to form a trench, forming a sidewall oxide layer over the sidewalls of the trench; removing the sidewall oxide layer in the dummy region, forming a silicon nitride layer over the sidewalls of the sidewall oxide layer both in the cell region and in the dummy region, filling the trench with an insulating layer, polishing the insulating layer to expose the pad nitride layer, and removing the pad nitride layer.

Method for fabricating semiconductor device having trench isolation layer

Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.

Capacitor for a semiconductor device and manufacturing method thereof

An oxide pattern forming method comprises forming an oxide layer on a semiconductor substrate, implanting boron ions of not less than 1.0&#xd7;10atoms/cmonto the oxide layer in a given region, and wet-etching the oxide layer in the remaining region where the boron ions are not implanted.

Oxide pattern forming method and patterning method of semiconductor device

A method of removing an ion implanted photoresist comprises performing first cleaning a semiconductor substrate having the ion implanted photoresist using hot deionized water to which a megasonic process is applied, first rinsing the semiconductor substrate using cold deionized water, drying the semiconductor substrate, removing the ion implanted photoresist, and second cleaning the semiconductor wafer using an SPM solution.

Method of removing ion implanted photoresist

Growing community of inventors

Icheon-si, South Korea

Woo Jin Kim