Hynix Semiconductor Inc.

Woo-Jin Kim

Se-Aug Jang

Hong-Seon Yang

Tae-Woo Jung

Hyun-Chul Sohn

Hyung-Soon Park

Seo-Min Kim

Young-Bog Kim

Eung-Rim Hwang

Jae-Ok Kim

Jong-Hyuk Oh

Disclosed are a memory device and a method for fabricating the same. The memory device includes: a substrate provided with a trench; a bit line contact junction formed beneath the trench; a plurality of storage node contact junctions formed outside the trench; and a plurality of gate structures each being formed on the substrate disposed between the bit line contact junction and one of the storage node contact junctions. Each sidewall of the trench becomes a part of the individual channels and thus, channel lengths of the transistors in the cell region become elongated. Accordingly, the storage node contact junctions have a decreased level of leakage currents, thereby increasing data retention time.

Memory device and method for fabricating the same

The present invention provides a method for fabricating a semiconductor device capable of suppressing stresses concentrated at bottom corners of a gate electrode as simultaneously as preventing an oxidation of a metal included in a gate electrode. The inventive method includes the steps of: forming a gate oxide layer on a substrate; forming a gate electrode including at least one metal layer on the gate oxide layer; forming an oxide layer on the substrate including the gate electrode at a temperature lower than oxidation temperature of the metal layer; and etching selectively the densified oxide layer so as to form an oxide spacer on the lateral sides of the gate electrode.

Method for fabricating semiconductor device

Growing community of inventors

Kyoungki-do, South Korea

Woo-Jin Kim